Allicdata Part #: | MPSA28RLRPG-ND |
Manufacturer Part#: |
MPSA28RLRPG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 80V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 500m... |
DataSheet: | MPSA28RLRPG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSA28 |
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MPSA28RLRPG transistors are a type of single bipolar junction transistors (BJT). As a current-controlled device, they can be used in many applications and offer a wide range of solutions. They are used in amplifying circuits, providing low noise operation and gain. Additionally, this device is often found in low-power RF applications such as cellular phone receivers and antennas.
The MPSA28RLRPG transistor is a member of the SOT-23 package family. It is constructed of an epitaxial base region, a collector region, and a central emitter. It is designed to operate over a wide temperature range and is manufactured in a low-cost plastic package, making it an ideal choice for applications demanding cost effective performance.
The transistor’s basic operation involves the movement of charge carriers between the emitter and collector contacts. A small current in its base region will trigger a much larger current in the collector region. This current-gain is defined by the transistor’s current gain ratio, or hFE. The MPSA28RLRPG transistor has an hFE of 10 to 900, allowing it to be used as an amplifier in low power RF applications.
Unlike conventional transistors, the MPSA28RLRPG is an NPN type device. This means that the base of the device is positive and the emitter is negative. When a positive voltage is applied to the base, a current flows from the collector to the emitter, resulting in the transistor amplifying a signal. When the voltage is removed from the base, the transistor switches off and the current flowing from the collector to the emitter stops.
The MPSA28RLRPG has two distinct advantages over other transistor types. First, it has a low collector to base resistance ratio, meaning it can easily be driven by a large range of current sources. Second, the transistor has a low saturation voltage. This is advantageous for efficient operation as it reduces the voltage drop on the device when it is switched on and supplies power to the load.
Apart from amplifying circuits and low power RF applications, the MPSA28RLRPG transistor can also be used in many other applications. It can be found in switching systems, logic circuits, and various consumer electronics such as TVs, DVD players and hi-fi systems, as well as in wireless communication products. It is also used in brushless DC motors, voltage regulators, and temperature controllers.
In conclusion, the MPSA28RLRPG is an efficient and reliable single bipolar junction transistor, highly suitable for many applications, from RF and amplifying circuits, to consumer electronics and motors. This device has the ability to deliver excellent performance and cost effectively, making it an ideal choice for applications where both quality and affordability are important.
The specific data is subject to PDF, and the above content is for reference
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