MPSA56_D27Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	625mW
Frequency - Transition:	50MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	MPSA56

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Introduction

The MPSA56_D27Z is a bipolar, or two terminal, NPN Junction Transistor (JT) with a collector-to-emitter ratings of 30 amperes and a current gain of 630. It is one of the highest rated NPN transistors available and is suitable for a wide range of applications. This article provides an overview of the technology and features of this transistor, as well as its application field and working principle.

Technology and Features

The MPSA56_D27Z utilizes a NPN type structure and has a 30 amperes collector-to-emitter rating and a 630 current gain. It has very low power dissipation and can operate at temperatures up to 175°C. Furthermore, the device has a maximum junction temperature of 200°C, anlge halo termination, a collector-to-emitter breakdown voltage of >500v, and an emitter-to-collector breakdown voltage of >100v. It is rated for a 1.2 watt maximum power dissipation and is rated with a 1.2 ohm maximum collector-to-emitter saturation resistance. The device is also hermetically sealed and is equipped with a gold-plated lead frame for improved reliability. In addition, the package features a UL rating of 94V-0 for flammability, a 4-pin dual-in-line assembly, and is suitable for a variety of applications such as switching and audio amplifiers.

MPSA56_D27Z Application Field

The MPSA56_D27Z is an ideal choice for a range of applications such as switching, audio amplifiers, motor drives, and other high-current applications. It can be used for general-purpose NPN transistor applications that require a high-current rating. In addition, it can also be used for low-power applications such as at low voltages or in low-power circuits where a higher current rating is needed.

MPSA56_D27Z Working Principle

The MPSA56_D27Z is a bipolar NPN JT that works on a simple switching principle. When the voltage at the base terminal is zero or negative, the transistor is off and no current will flow from the Collector to the Emitter. However, when the base voltage is positive, the transistor conducts, allowing current to flow from the Collector to the Emitter. The amount of current that can be conducted depends on the current gain of the transistor and the current drawn.The current gain of the transistor is given by the ratio, hFE, which is the current gain at a particular collector current. The hFE of the MPSA56_D27Z is given as 630 at 1mA collector current. This means that the Collector current will be 630 times the Base current when a 1mA collector current is drawn. In other words, the Collector current will be 630mA when a 1mA of Base current is applied.

Conclusion

The MPSA56_D27Z is an NPN transistor with an impressive collector-to-emitter rating of 30 amperes and a current gain of 630. The device is hermetically sealed and features a UL rating of 94V-0 for flammability, a 4-pin dual-in-line assembly, and can be used for general-purpose NPN transistor applications and applications such as switching, audio amplifiers, and motor drives. Furthermore, the device works on a simple switching principle when the voltage at the base terminal is zero or negative, the transistor is off and no current will flow from the Collector to the Emitter, however, when the base voltage is positive, the transistor conducts, allowing current to flow from the Collector to the Emitter.

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