MPSA42-AP Allicdata Electronics

MPSA42-AP Discrete Semiconductor Products

Allicdata Part #:

MPSA42-APMSTB-ND

Manufacturer Part#:

MPSA42-AP

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN 300V 0.625A TO-92
More Detail: Bipolar (BJT) Transistor NPN 300V 300mA 50MHz 625m...
DataSheet: MPSA42-AP datasheetMPSA42-AP Datasheet/PDF
Quantity: 30000
2000 +: $ 0.03043
6000 +: $ 0.02646
10000 +: $ 0.02249
50000 +: $ 0.01985
100000 +: $ 0.01764
Stock 30000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 10V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92
Description

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MPSA42-AP is a bipolar junction transistor (BJT) developed by Motorola, Inc. It is categorized as a single transistor due to its structure and design. Its development gave rise to several application fields such as oscillators, high-frequency switching, and amplifier circuits.

The MPSA42-AP is a general-purpose amplifier transistor with a TO-92 plastic package. It has three leads, base, collector and emitter, which are connected internally. It is a PNP type BJT with a maximum collector-emitter voltage rating of 80V and a maximum power dissipation of 250mW.

The MPSA42-AP is unique in its ability to have very low forward voltage drop values (VCEof about 0.4V). Its collector-base voltage drop is incredibly low, allowing for higher current gains (hfe). Furthermore, the MPSA42-AP has an excellent noise immunity and is designed to provide resonance-free operation. It also features high gain at high frequencies, and is suitable for most amplifier circuits.

The device\'s working principle is based on the operation of a simple BJT. Applying a voltage to the emitter-base junction results in the injection of electrons into the base region which, in turn, creates an active region in the P-type material. As a consequence, the collector current increases, leading to increased current gain. This mechanism is explained further by the CE-CB phase diagram, which is largely unaffected by the MPSA42-AP\'s high frequency behavior.

When combined with other BJTs to form a solid-state relay, the MPSA42-AP can prove immensely useful. By using an MPSA42-AP as the driving component of the relay, engineers have the ability to switch large currents with relatively low supply voltage without consuming too much power. The MPSA42-AP is also often used in amplifier circuits as a low-noise driver element.

The MPSA42-AP transistor is a great tool for engineers. Its low voltage drop, high gain, and wide variety of applications make it an ideal choice for low-power amplifier and switching circuits. With its wide range of features, the MPSA42-AP is an invaluable asset in modern transistor technology.

The specific data is subject to PDF, and the above content is for reference

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