MPSA42-AP Discrete Semiconductor Products |
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| Allicdata Part #: | MPSA42-APMSTB-ND |
| Manufacturer Part#: |
MPSA42-AP |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Micro Commercial Co |
| Short Description: | TRANS NPN 300V 0.625A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN 300V 300mA 50MHz 625m... |
| DataSheet: | MPSA42-AP Datasheet/PDF |
| Quantity: | 30000 |
| 2000 +: | $ 0.03043 |
| 6000 +: | $ 0.02646 |
| 10000 +: | $ 0.02249 |
| 50000 +: | $ 0.01985 |
| 100000 +: | $ 0.01764 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 300mA |
| Voltage - Collector Emitter Breakdown (Max): | 300V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max): | 250nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 10V |
| Power - Max: | 625mW |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92 |
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MPSA42-AP is a bipolar junction transistor (BJT) developed by Motorola, Inc. It is categorized as a single transistor due to its structure and design. Its development gave rise to several application fields such as oscillators, high-frequency switching, and amplifier circuits.
The MPSA42-AP is a general-purpose amplifier transistor with a TO-92 plastic package. It has three leads, base, collector and emitter, which are connected internally. It is a PNP type BJT with a maximum collector-emitter voltage rating of 80V and a maximum power dissipation of 250mW.
The MPSA42-AP is unique in its ability to have very low forward voltage drop values (VCEof about 0.4V). Its collector-base voltage drop is incredibly low, allowing for higher current gains (hfe). Furthermore, the MPSA42-AP has an excellent noise immunity and is designed to provide resonance-free operation. It also features high gain at high frequencies, and is suitable for most amplifier circuits.
The device\'s working principle is based on the operation of a simple BJT. Applying a voltage to the emitter-base junction results in the injection of electrons into the base region which, in turn, creates an active region in the P-type material. As a consequence, the collector current increases, leading to increased current gain. This mechanism is explained further by the CE-CB phase diagram, which is largely unaffected by the MPSA42-AP\'s high frequency behavior.
When combined with other BJTs to form a solid-state relay, the MPSA42-AP can prove immensely useful. By using an MPSA42-AP as the driving component of the relay, engineers have the ability to switch large currents with relatively low supply voltage without consuming too much power. The MPSA42-AP is also often used in amplifier circuits as a low-noise driver element.
The MPSA42-AP transistor is a great tool for engineers. Its low voltage drop, high gain, and wide variety of applications make it an ideal choice for low-power amplifier and switching circuits. With its wide range of features, the MPSA42-AP is an invaluable asset in modern transistor technology.
The specific data is subject to PDF, and the above content is for reference
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MPSA42-AP Datasheet/PDF