MPSA63_D27Z Allicdata Electronics
Allicdata Part #:

MPSA63_D27Z-ND

Manufacturer Part#:

MPSA63_D27Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 30V 1.2A TO-92
More Detail: Bipolar (BJT) Transistor PNP - Darlington 30V 1.2A...
DataSheet: MPSA63_D27Z datasheetMPSA63_D27Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 1.2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPSA63
Description

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The MPSA63_D27Z is a type of bipolar junction transistor (BJT), specifically classified as a single transistor. BJTs are classified as either pnp or npn transistors based on the arrangement of the three semiconductor layers in the transistor. The MPSA63_D27Z is a three-terminal, through-hole, npn transistor, generally used for switching and amplification purposes. Additionally, it supports a collector current of up to 200mA and an accessible Breakdown Voltage of 120V.

The MPSA63_D27Z is used in a variety of applications, including circuit switching, amplification, analog switching, and interfacing between digital logic circuits. Due to its low power consumption and low cost, it is well-suited for use in battery-powered circuits, such as mobile phones, portable audio players, and other mobile devices, and is also used in power control and management applications where efficiency is critical.

The working principle of the MPSA63_D27Z is based on the npn type bipolar transistor, which consists of two p-type base layers and one n-type collector layer. The base layer is negatively charged and acts as a control gate for the electrons, while the collector layer is positively charged and acts as a sink for the electrons. When a small current is applied to the base, the electrons are attracted to the collector, creating a larger current flowing from the collector to the emitter. This larger current is used to control other components in the circuit. This basic operation is the same for all BJTs.

Additionally, the MPSA63_D27Z features a more detailed architecture, which makes it even more suitable for a variety of applications. Its structure includes a built-in base-emitter bias voltage, which ensures stable operation even with varying external voltage biases. Its base has a wide-area resistance, which helps reduce the risk of saturation and helps ensure noise immunity. Finally, its collector has an integrated connection plate, which allows for adjustment of the collector current.

In conclusion, the MPSA63_D27Z is a type of npn BJT single transistor that is used in many applications. It has a low power consumption, a low cost, and a wide array of features that make it suitable for a variety of circuit designs. It works based on the fundamentals of the npn type bipolar transistor and has more detailed architecture that make it even better suited for a variety of applications. It is well-suited for use in battery-powered circuits and power control and management applications.

The specific data is subject to PDF, and the above content is for reference

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