MRF21010LSR5

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The MRF21010LSR5 is a radio frequency (RF) high power field-effect transistor (FET) developed by Motorola. This MOSFET has been designed mainly for professional high power linear amplifier applications up to 500 MHz, such as industrial and medical applications. The MRF21010LSR5 is designed to work in the 6V-15V power supply range, provide low cutoff voltage and high linearity performance that make it suitable for linear and digital modulation applications.

The MRF21010LSR5 is a silicon N-Channel enhancement-mode FET which is well-suited for use in applications such as transmitter and amplifier stages. The FET operates at a voltage of 15V and its drain current is limited to a value of 1.8A. The maximum power output of the FET is 125 watts and its power dissipation is only 2.45watts. The device is also equipped with a large gain but low noise figure. It has a 20dB gain across a broad frequency range of 500MHz and exhibits a good noise figure of 8.8dB.

The MRF21010LSR5 also features an integrated shielding system, which helps minimize the irradiated noise. Additionally, this FET has an improved thermal resistance which provides a better cooling effect. It also has a low junction-to-ambient thermal impedance making it able to handle high powers with less overheating.

The working principle behind the MRF21010LSR5 is based on the mechanism of field-effect transistors. This is a type of transistor which works by controlling a current through semiconductor material using an electric field which is created by an external voltage source. The electric field is used to control a channel between source and drain which is created by the gate voltage. The voltage between source and gate is whatis used to regulate or switch the current flowing through the channel, thus allowing for modulation of the current.

Due to its low cutoff voltage and high linearity performance, the MRF21010LSR5 is an ideal choice for applications requiring high power linear amplifier. It is suitable for use in industrial, medical and RF modulations. Furthermore, its integrated shielding system makes it highly efficient in minimizing radiated noise and its improved thermal resistance provides good cooling effect.

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