MRF21010LSR1

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The MRF21010LSR1 is a high gain flip-chip N-Channel RF Power MOSFET transistor from Freescale Semiconductor, incorporated in the Motorola Semiconductor portfolio. It is designed for Class B and broadband RF, microwave, and cellular applications.

This device has a rated breakdown voltage of 40 volts, with a maximum operating temperature of 125°C, a maximum operating frequency of 1.2 GHz, and a total power dissipation of 700 mW. It is packaged in a 2.49 mm x 2.49 mm ST-T, which is the smallest footprint that can be used to accommodate the size of the device.

The MRF21010LSR1 is used in applications that require high gain, high linearity, and low noise performance. It is suitable for applications such as microwave ovens, base station amplifiers, and amplifiers for broadband/microwave amplifiers. It is also often used in RF power amplifiers and cellular base stations that require improved linearity and performance. This device is designed for reduced signal distortion and improved efficiency, as well as improved system RF output power.

The MRF21010LSR1 is manufactured using proprietary SOI (silicon-on-insulator) process technology, enabling a low power dissipation and a lower internal resistance. This process enables devices to be more robust, reliable, and resilient to thermal and mechanical stresses. The devices are designed for high gain, high linearity, and low noise operation. The device also features a full voltage-controlled Gate drive.

The working principle of the MRF21010LSR1 is based on the use of an N-Channel Metal-Oxide Semiconductor Field-Effect transistor (MOSFET). It consists of four terminals, the gate, drain, source and body, which enable the transistor to be controlled. An input signal is applied to the gate terminal and when it surpasses a certain threshold voltage, the gate produces a voltage, which in turn controls the flow of current between the drain and the source.

The gate terminal is input through a resistor, with the MOSFET connected as an amplifier. The resistor controls the signal voltage, thereby providing precise control of the drain current in the device. The amplifier controls the current flow between the source and the drain, and the signal from the source is amplified and then fed to the drain. This signal is then presented to the load.

The MRF21010LSR1 is designed for Class B and broadband RF, microwave, and cellular applications. It has a high gain, low noise figure, low distortion, and improved efficiency. It is used in applications that require an improved system RF output power, reduced signal distortion, and improved linearity. This device is perfect for applications such as microwave ovens, base station amplifiers, and amplifiers for broadband/microwave amplifiers.

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