Allicdata Part #: | 1465-1173-ND |
Manufacturer Part#: |
MRF275G |
Price: | $ 110.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | FET RF 2CH 65V 500MHZ 375-04 |
More Detail: | RF Mosfet 2 N-Channel (Dual) Common Source 28V 100... |
DataSheet: | MRF275G Datasheet/PDF |
Quantity: | 10 |
1 +: | $ 100.89400 |
10 +: | $ 96.02530 |
25 +: | $ 92.54560 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | 2 N-Channel (Dual) Common Source |
Frequency: | 500MHz |
Gain: | 11.2dB |
Voltage - Test: | 28V |
Current Rating: | 26A |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 150W |
Voltage - Rated: | 65V |
Package / Case: | 375-04 |
Supplier Device Package: | 375-04, Style 2 |
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The MRF275G is a field effect transistor (FET) and is a type of metal oxide semiconductor field effect transistor (MOSFET). It is specifically designed to be used in radio frequency (RF) applications. Built on a high resistive silicon material, the MRF275G is characterized by high linearity and gain levels which makes it suitable for numerous applications. It is also capable of switching off devices at high speed with minimum loss and resistance.
The MRF275G has an operating voltage range of 13.5 to 30 volts with an input capacitance of 270 to 400 pf and gate leakage current of 15nA. It has a maximum gain of 10dB and a maximum RF input of 25 watts and is capable of up to 40 watts in pulsed conditions. With its single gate MOSFET structure, the device allows for quick switching of devices in the varying voltage and current requirements of different applications. The MRF275G also has a high breakdown voltage, which makes it ideal for high voltage switching.
The main use of the MRF275G is in radio frequency applications as it offers superior linearity and gain levels. It is primarily used as a switching device in transmitters, receivers and transceivers. It is also utilized in high speed logic systems, modulators and demodulators, and mixers. Additionally, it can be used in harmonic generation, audio output, signal synthesis, and many other digital to analog conversion applications.
The working principle of the MRF275G is the same as other MOSFET transistors. It consists of a source, drain, and gate which controls the flow of current between the source and drain. By applying a voltage to the Gate, the MOSFET will begin to draw current between the source and the drain, which is determined by the Gate voltage. Modulating the Gate voltage will cause changes in the current between the source and drain. This is how the MRF275G is used to create analogue and digital signals. It can also be used as a switch in RF applications.
The MRF275G has proven to be an important component in a variety of applications, from high frequency to audio output. With its superior linearity and gain, its simple gate structure, and its high breakdown voltage, the MRF275G is an invaluable component for RF applications.
The specific data is subject to PDF, and the above content is for reference
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