| Allicdata Part #: | 1086-7802-ND |
| Manufacturer Part#: |
MSMBG100AE3 |
| Price: | $ 0.77 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 100V 162V DO215AA |
| More Detail: | N/A |
| DataSheet: | MSMBG100AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 782 +: | $ 0.70076 |
| Voltage - Clamping (Max) @ Ipp: | 162V |
| Supplier Device Package: | SMBG (DO-215AA) |
| Package / Case: | DO-215AA, SMB Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 3.7A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 111V |
| Voltage - Reverse Standoff (Typ): | 100V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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Surge protection is a critical component in regulating or controlling sudden rises in electrical transients. TVS (Transient Voltage Suppressors) diodes have become a popular surge protection component for electronic systems due to their fast response times and ability to absorb and channel high energy transients to ground. Among the popular and robust applications of TVS diodes is the MSMBG100AE3, an esd protection diode designed to combat electrostatic discharge (ESD) and lightning-induced transients in a variety of electronic systems. This article provides an overview of the MSMBG100AE3 application field and its working principle.
MSMBG100AE3 Application Field
The MSMBG100AE3 is a small, surface-mount diode designed to protect potentially vulnerable devices from overvoltage caused by electrostatic discharge or lightning-induced transients. It can also serve as an off-the-shelf component in automotive and industrial applications that have to contend with more rugged conditions. Dynamics changed from real-time operations to remote and distributed operations, which can also increase the risk of ESD and transient surges. The MSMBG100AE3 can be used in a variety of applications, such as in communication systems, computing systems, automotive systems, consumer electronics, industrial systems, and other sensitive equipment that must contend with damaging ESD and transient surge events.
MSMBG100AE3 Working Principle
The working principle of the MSMBG100AE3 is based on its ability to strategically absorb and shunt away transients from the sensitive interface in order to prevent any damage to it. The diode has a silicon avalanche breakdown that can absorb potentially damaging energy and channel it away to ground. The energy is typically shunt away fast enough to protect the interface before the potential damage is done. The MSMBG100AE3 diode is able to channel up to 100W in peak pulse power, making it one of the most efficient and reliable ESD and transient surge protection devices on the market.
The MSMBG100AE3 diode is designed with two bodies and uses a common cathode connection. It has dual 5 KV ESD protection and a maximum clamping voltage of 5.4V. It operates using the Zener region and also has a single power MOSFET in N-channel configuration. The diode has a 5ms response time for 1V/μs ESD discharges. It has a temperature range of -55°C to 150°C and is capable of handling a peak pulse current of 20A, making it suitable for a wide range of applications.
Conclusion
The MSMBG100AE3 is a versatile and powerfully efficient diode designed for immediate ESD and transient surge protection. It can be used in various applications ranging from communication and computing to automotive and industrial systems. Its working principle is based on its ability to absorb and shun away transient energy away from sensitive systems, thereby preventing them from any potential damage. With its extremely fast response time and ability to handle up to 100W in peak pulse power, the MSMBG100AE3 is an ideal choice for virtually any application that requires ESD and transient protection.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
| MSMBJ170A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ22A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBG10CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
| MSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
| MSMBJ30A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJ150A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 150V 243V DO214... |
| MSMBJ10A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJ24A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBG24A/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG11CA/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
| MSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
| MSMBG30AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MSMBG14CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MSMBG54CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
| MSMBG16CAE3/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
| MSMBJ36AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
| MSMBG8.5A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBJ22CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
| MSMBG28CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBG40A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 40V 64.5V DO215... |
| MSMBJ18A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBG18CA/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBG100AE3 Datasheet/PDF