MSMBJ8.0AE3 Allicdata Electronics
Allicdata Part #:

1086-8170-ND

Manufacturer Part#:

MSMBJ8.0AE3

Price: $ 0.71
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 8V 13.6V DO214AA
More Detail: N/A
DataSheet: MSMBJ8.0AE3 datasheetMSMBJ8.0AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
848 +: $ 0.64602
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Voltage - Clamping (Max) @ Ipp: 13.6V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 44.1A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 8.89V
Voltage - Reverse Standoff (Typ): 8V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes is a special type of semiconductor component used to protect circuits from high voltages. Specifically, they are devices which use reverse biased p-n junctions to provide a low resistance path to current when subjected to a voltage greater than the typical breakdown of the junction. This high voltage transient protection, or TVS protection, can be seen in a wide range of applications, such as automotive, consumer electronics, telecommunications and more. The MSMBJ8.0AE3 is a TVS - Diode that is particularly well suited for automotive applications. The MSMBJ8.0AE3 utilizes an enhanced silicon avalanche diode design that provides exceptional protection against high voltage transients. The device is specifically designed for automotive applications and is suitable for use in AC pulsed circuits, such as those in electric vehicles. The very low reverse breakdown voltage of the diode ensures it will offer protection against high voltage transients. Additionally, the device has a low capacitance and a fast operating response time, making it an ideal choice for protecting voltage sensitive components and circuits. The MSMBJ8.0AE3 is a silicon avalanche diode design which utilizes a specially enhanced breakdown voltage. The PN-junction is exposed to a reverse bias, which provides a low resistance path to current when subjected to a voltage which exceeds the breakdown of the junction. This ensuring all high voltage transient protection is handled in an efficient manner. The device has a low capacitance and a fast response time, making it suitable for high-speed pulses. It is capable of handling a maximum of 8.0A of reverse current and can withstand up to 8,000V of transient peak voltage, making it ideal for protecting electronic components from damaging transients. Another benefit of the MSMBJ8.0AE3 is its temperature-stable behavior. The device is able to operate at operating temperature range of -40 to +105°C, making it suitable for use in wide range of automotive applications. Additionally, the device\'s low parasitic inductance and capacitance helps minimize the frequency response losses that can occur in AC pulses. The MSMBJ8.0AE3 is an ideal choice for automotive applications that require high voltage transient protection. It offers excellent protection against high voltage transients, while having a low capacitance and fast response time. It is also capable of handling up to 8.0A of reverse current and has excellent temperature stability making it ideal for use in a variety of automotive applications. With its superior protection and reliability, the MSMBJ8.0AE3 is an ideal choice for any application that requires high voltage transient protection.

The specific data is subject to PDF, and the above content is for reference

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