MSMBG110AE3 Circuit Protection

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The MSMBG110AE3, or multi-surface mount Schottky barrier diode (TVS-Diode) is a type of circuit protection device that protects against electrical transients. It is commonly used in consumer electronics, automotive, lighting, industrial automation, renewable energy and other applications.

The MSMBG110AE3 is a high-speed diode with a peak reverse voltage of 110V, an avalanche breakdown voltage of 70V and a holding current of 400mA. It also features a low reverse leakage current of 2mA at 25⁰C, and a maximum power dissipation of 145mW at 25⁰C.

The MSMBG110AE3 is a two-terminal, light-weight, and low-cost protection device. Its design offers excellent stability and transient protection for today’s ever-increasing circuit speeds. Its low on-state voltage drop makes it efficient for DC applications. The diode also features a wide operating temperature range of -55⁰C to +125⁰C.

The MSMBG110AE3 is an ideal choice for semiconductor protection due to its ability to sustain high reverse and overvoltage conditions beyond what conventional protection diodes can provide. The diode has an extremely fast response time of 1ns, which makes it excellent protection against overvoltages caused by transients or lightning. The low leakage current also makes it suitable for AC applications such as motor drives or power supplies.

The MSMBG110AE3 works by clamping voltage levels when subjected to a high voltage or an overvoltage condition, which prevents damage to the electronic components connected to it. In reverse biased conditions, the diode forms an avalanche breakdown junction, which holds the voltage down to a safe level. Once the voltage stabilizes, the diode returns to its open circuit state, allowing the circuit to continue to operate.

The MSMBG110AE3 is an efficient and reliable surge protection solution for a variety of applications. Its high voltage rating, high power dissipation, and wide operating temperature range make it an excellent choice for protecting sensitive electronic components from damage due to transients.

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