MSMBJ12A Allicdata Electronics
Allicdata Part #:

1086-8015-ND

Manufacturer Part#:

MSMBJ12A

Price: $ 0.71
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 12V 19.9V DO214AA
More Detail: N/A
DataSheet: MSMBJ12A datasheetMSMBJ12A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
848 +: $ 0.64602
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Voltage - Clamping (Max) @ Ipp: 19.9V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 30.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 13.3V
Voltage - Reverse Standoff (Typ): 12V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MSMBJ12A – TVS-Diodes

The MSMBJ12A is a 500W Pulse Width Modulation (PWM) Thyristor Surge Suppressor (TVS) Diode designed for use in high power switching and mains power supplies. It is ideal for protection against lightning induced surges and other sources of transients. It features a rating of 12 amps at a forward voltage drop of 1.5 volts, and can be used for a wide range of applications.

Application Fields

The MSMBJ12A is generally used in power switching and mains power supplies for various technology products and other consumer electronics. It is found in products such as AC/DC adapters, power supplies for LCD/plasma TVs, sound systems, routers, modems, and microwave ovens. It is also used in industrial equipment such as elevators, pumps, HVAC control systems, and other high power applications. It is ideal for protection against surge caused by lightning strikes and other transient sources.

Working Principle

The MSMBJ12A operates on a principle based on a metal-oxide-semiconductor field-effect transistor (MOSFET) structure. The MOSFET structure is composed of a layer of metal (tin), an oxide insulator (silicon dioxide—SiO2) and a semiconductor layer (silicon) that are deposited onto a metal or ceramic substrate. A potential difference between the oxide and the semiconductor layer causes a voltage drop across the oxide layer, which controls the flow of electrons across the oxide layer and determines the structure’s behavior.

In the operation of the MSMBJ12A, the MOSFET structure is further modified by the addition of a thyristor, or silicon net, between the source and drain terminals of the MOSFET structure. This configuration allows current to be conducted when a low voltage is applied and, conversely, allows current to be blocked when a higher voltage is applied. When the potentially damaging voltage is sensed by the thyristor, the thyristor turns on and conducts current, dissipating the potentially damaging energy, thus protecting the device.

This combination of MOSFETs and thyristors makes it ideal for surge protection in power switching and mains supplies, especially in applications for mobile communication, TV broadcasting, and other activities. It is capable of high switching over voltage and over current operation.

Advantages

The MSMBJ12A offers some key advantages when compared with other TVS diodes. Firstly, its higher wattage rating allows it to be used in applications with higher power levels. Secondly, it has a higher surge capability, meaning that it is able to better protect devices against potentially damaging spikes in voltage. Lastly, its MOSFET and thyristor combination is less prone to failure, which makes it more reliable.

Conclusion

The MSMBJ12A is a 500W PWM TVS diode that can be used for protection against transient voltages and for high power switching and mains power supplies. It is suitable for a wide range of applications, such as AC/DC adapters, LCD/plasma TVs, sound systems, routers, modems, and microwave ovens. The higher wattage rating, higher surge capability, and MOSFET-thyristor combination of the MSMBJ12A make it particularly well suited for applications involving high levels of power.

The specific data is subject to PDF, and the above content is for reference

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