| Allicdata Part #: | 1086-8015-ND |
| Manufacturer Part#: |
MSMBJ12A |
| Price: | $ 0.71 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 12V 19.9V DO214AA |
| More Detail: | N/A |
| DataSheet: | MSMBJ12A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 848 +: | $ 0.64602 |
| Voltage - Clamping (Max) @ Ipp: | 19.9V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 30.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 13.3V |
| Voltage - Reverse Standoff (Typ): | 12V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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.MSMBJ12A – TVS-Diodes
The MSMBJ12A is a 500W Pulse Width Modulation (PWM) Thyristor Surge Suppressor (TVS) Diode designed for use in high power switching and mains power supplies. It is ideal for protection against lightning induced surges and other sources of transients. It features a rating of 12 amps at a forward voltage drop of 1.5 volts, and can be used for a wide range of applications.
Application Fields
The MSMBJ12A is generally used in power switching and mains power supplies for various technology products and other consumer electronics. It is found in products such as AC/DC adapters, power supplies for LCD/plasma TVs, sound systems, routers, modems, and microwave ovens. It is also used in industrial equipment such as elevators, pumps, HVAC control systems, and other high power applications. It is ideal for protection against surge caused by lightning strikes and other transient sources.
Working Principle
The MSMBJ12A operates on a principle based on a metal-oxide-semiconductor field-effect transistor (MOSFET) structure. The MOSFET structure is composed of a layer of metal (tin), an oxide insulator (silicon dioxide—SiO2) and a semiconductor layer (silicon) that are deposited onto a metal or ceramic substrate. A potential difference between the oxide and the semiconductor layer causes a voltage drop across the oxide layer, which controls the flow of electrons across the oxide layer and determines the structure’s behavior.
In the operation of the MSMBJ12A, the MOSFET structure is further modified by the addition of a thyristor, or silicon net, between the source and drain terminals of the MOSFET structure. This configuration allows current to be conducted when a low voltage is applied and, conversely, allows current to be blocked when a higher voltage is applied. When the potentially damaging voltage is sensed by the thyristor, the thyristor turns on and conducts current, dissipating the potentially damaging energy, thus protecting the device.
This combination of MOSFETs and thyristors makes it ideal for surge protection in power switching and mains supplies, especially in applications for mobile communication, TV broadcasting, and other activities. It is capable of high switching over voltage and over current operation.
Advantages
The MSMBJ12A offers some key advantages when compared with other TVS diodes. Firstly, its higher wattage rating allows it to be used in applications with higher power levels. Secondly, it has a higher surge capability, meaning that it is able to better protect devices against potentially damaging spikes in voltage. Lastly, its MOSFET and thyristor combination is less prone to failure, which makes it more reliable.
Conclusion
The MSMBJ12A is a 500W PWM TVS diode that can be used for protection against transient voltages and for high power switching and mains power supplies. It is suitable for a wide range of applications, such as AC/DC adapters, LCD/plasma TVs, sound systems, routers, modems, and microwave ovens. The higher wattage rating, higher surge capability, and MOSFET-thyristor combination of the MSMBJ12A make it particularly well suited for applications involving high levels of power.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBJ12A Datasheet/PDF