MSMBJ170A Allicdata Electronics

MSMBJ170A Circuit Protection

Allicdata Part #:

1086-8047-ND

Manufacturer Part#:

MSMBJ170A

Price: $ 0.71
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 170V 275V DO214AA
More Detail: N/A
DataSheet: MSMBJ170A datasheetMSMBJ170A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
848 +: $ 0.64602
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Voltage - Clamping (Max) @ Ipp: 275V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 2.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 189V
Voltage - Reverse Standoff (Typ): 170V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MSMBJ170A is a diode that belongs to a larger category of transient voltage suppressor (TVS) diodes. TVS diodes are components designed to protect a circuit or device from harm due to excessive electrical transients. A TVS diode acts as a voltage shunt, providing a low-impedance path to divert excess voltage away from the sensitive circuit elements. The MSMBJ170A component is designed to protect circuits from transients up to 170 volts.

The MSMBJ170A is a diode that consists of two layers in a three-layer semiconductor package. The diode is constructed from an N-type silicon layer sandwiched between two P-type silicon layers. This configuration creates a PN junction, which is commonly used in semiconductor devices to control the flow of current. The device is also commonly known as a Zener diode, after the physicist, Clarence Zener, who first described their behavior in 1934.

The MSMBJ170A diode is designed to clamp voltage levels around a given reference point. This is accomplished by connecting the diode between the power source and the sensitive circuit elements. When the voltage exceeds the device’s breakdown voltage, the diode will conduct current and reduce the applied voltage to a safe level. This provides protection to the sensitive circuit elements from damaging voltage spikes and transients. When the voltage returns to a normal level, the diode will stop conducting current.

The MSMBJ170A is designed for use in many different applications, including power supply protection, circuit protection, and protection against electrostatic discharge (ESD). It can be used to protect against short-term pulse transients, surge protection, and overvoltage/undervoltage transients. The device is capable of withstanding peak current levels up to 1A and peak power dissipation levels up to 600W.

The MSMBJ170A has a wide variety of features and characteristics. This includes a wide operating temperature range of -55°C to 175°C, excellent wear-out characteristics, low leakage current, self-healing properties, and fast response times. Additionally, this device is RoHS compliant and UL Recognized.

The MSMBJ170A is a versatile device that is suitable for use in many different applications. Its robust design and features make it an ideal choice for circuit protection against transients up to 170 volts. By connecting the diode between the power source and the sensitive circuit elements, it is capable of providing reliable protection against both short-term and long-term transients.

The specific data is subject to PDF, and the above content is for reference

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