| Allicdata Part #: | MSMBJ24A/TRMS-ND |
| Manufacturer Part#: |
MSMBJ24A/TR |
| Price: | $ 0.79 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS |
| More Detail: | N/A |
| DataSheet: | MSMBJ24A/TR Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 800 +: | $ 0.72117 |
| Current - Peak Pulse (10/1000µs): | 15.4A |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Clamping (Max) @ Ipp: | 38.9V |
| Voltage - Breakdown (Min): | 26.7V |
| Voltage - Reverse Standoff (Typ): | 24V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TVS (transient-voltage-suppresser) diodes are used widely in the electronics field to absorb and disperse any potentially transient voltage spikes that could potentially damage the device where it has been installed. The MSMBJ24A/TR is a type of TVS diode which specifically targets 24V Automotive Run, Load-dump and Fault conditions, therefore specifically aiming at a segment of the electronics industry. This particular diodes abilities and functions were designed to enhance the effectiveness of power management systems installed in automotive electronics.
The thrust mechanism embedded in the diode is called planar avalanche junction (PAJ), with a maximum peak pulse power of 1500W, with a 400V transient voltage suppression capability. As the name suggests, it is triggered by an avalanche effect, whereby a sudden increase in voltage initially triggers the protection mode, and the diode will absorb and disperse the transient voltage. The PAJ is designed to enter the protection mode almost immediately in case of a transient voltage. In addition, this diode also has the capability to reduce the transient voltage to the point of allowing safe passage of electronic current.
The particular construction of the PAJ featured in the MSMBJ24A/TR is the single-ending avalanche junction (SEJ) diode structure. This diode contains two anodes and two cathodes. Out of the two anodes, one is rectifying while the other remains grounded. The anode along with the two cathodes externally connect a distributed RC network to the diode, allowing for the instantaneous triggering of the protection mode. As an addition to the transient voltage absorption mode, the diode has latterally diffused drain (LDD) transistors inside the pous, along with two 1.5 ohm+1 diodes which work in parallel in order to enable the low-voltage protection mode.
The two diodes are conductive and selectively shut down any undesired signals on the nodes in which it is placed. The distributed RC network has been designed to produce a commutated voltage surge output. Due to the PAJ\'s high dissipation voltage capabilities, this allows for a fast-acting protection mode, activting in less than a microsecond. Finally, the LDD transistors reduce the leakage current when in a high voltage environment.
The MSMBJ24A/TR diodes have been specifically designed for automotive run, load-dump and fault condition. This diode is able to provide a fast response to transient voltage spikes and allow for a commutated voltage surge output. Due to its construction, this diode has high dissipation voltage capabilities and a fast acting protection mode. In addition, the lateral diffused drain transistors reduce current leakage while in a high-voltage environment. Finally, by containing two 1.5 ohm diodes in a parallel structure, this allows for a low-voltage protection mode and a reliable protection system.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBJ24A/TR Datasheet/PDF