MSMBJ24A/TR Allicdata Electronics
Allicdata Part #:

MSMBJ24A/TRMS-ND

Manufacturer Part#:

MSMBJ24A/TR

Price: $ 0.79
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS
More Detail: N/A
DataSheet: MSMBJ24A/TR datasheetMSMBJ24A/TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
800 +: $ 0.72117
Stock 1000Can Ship Immediately
$ 0.79
Specifications
Current - Peak Pulse (10/1000µs): 15.4A
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 38.9V
Voltage - Breakdown (Min): 26.7V
Voltage - Reverse Standoff (Typ): 24V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Description

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TVS (transient-voltage-suppresser) diodes are used widely in the electronics field to absorb and disperse any potentially transient voltage spikes that could potentially damage the device where it has been installed. The MSMBJ24A/TR is a type of TVS diode which specifically targets 24V Automotive Run, Load-dump and Fault conditions, therefore specifically aiming at a segment of the electronics industry. This particular diodes abilities and functions were designed to enhance the effectiveness of power management systems installed in automotive electronics.

The thrust mechanism embedded in the diode is called planar avalanche junction (PAJ), with a maximum peak pulse power of 1500W, with a 400V transient voltage suppression capability. As the name suggests, it is triggered by an avalanche effect, whereby a sudden increase in voltage initially triggers the protection mode, and the diode will absorb and disperse the transient voltage. The PAJ is designed to enter the protection mode almost immediately in case of a transient voltage. In addition, this diode also has the capability to reduce the transient voltage to the point of allowing safe passage of electronic current.

The particular construction of the PAJ featured in the MSMBJ24A/TR is the single-ending avalanche junction (SEJ) diode structure. This diode contains two anodes and two cathodes. Out of the two anodes, one is rectifying while the other remains grounded. The anode along with the two cathodes externally connect a distributed RC network to the diode, allowing for the instantaneous triggering of the protection mode. As an addition to the transient voltage absorption mode, the diode has latterally diffused drain (LDD) transistors inside the pous, along with two 1.5 ohm+1 diodes which work in parallel in order to enable the low-voltage protection mode.

The two diodes are conductive and selectively shut down any undesired signals on the nodes in which it is placed. The distributed RC network has been designed to produce a commutated voltage surge output. Due to the PAJ\'s high dissipation voltage capabilities, this allows for a fast-acting protection mode, activting in less than a microsecond. Finally, the LDD transistors reduce the leakage current when in a high voltage environment.

The MSMBJ24A/TR diodes have been specifically designed for automotive run, load-dump and fault condition. This diode is able to provide a fast response to transient voltage spikes and allow for a commutated voltage surge output. Due to its construction, this diode has high dissipation voltage capabilities and a fast acting protection mode. In addition, the lateral diffused drain transistors reduce current leakage while in a high-voltage environment. Finally, by containing two 1.5 ohm diodes in a parallel structure, this allows for a low-voltage protection mode and a reliable protection system.

The specific data is subject to PDF, and the above content is for reference

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