MSMBG45A Allicdata Electronics
Allicdata Part #:

1086-7915-ND

Manufacturer Part#:

MSMBG45A

Price: $ 0.77
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 45V 72.7V DO215AA
More Detail: N/A
DataSheet: MSMBG45A datasheetMSMBG45A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
782 +: $ 0.70076
Stock 1000Can Ship Immediately
$ 0.77
Specifications
Voltage - Clamping (Max) @ Ipp: 72.7V
Supplier Device Package: SMBG (DO-215AA)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 8.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

TVS (Transient Voltage Suppressors) diodes are diode-type voltage-clamping devices for circuit protection against overvoltage transients. They are available in both unidirectional and bidirectional configurations. They are specifically designed to protect sensitive electronic components from damage caused by voltage transients such as electrostatic discharge (ESD), electro-magnetic interference (EMI), lightning strikes, and switching surges. TVS diodes can provide protection from such overvoltage events with little effect on the electrical performance of the protected load.The TVS diode is a three-terminal (anode, cathode, and gate) device that has both breakdown and clamping voltage functions. The breakdown voltage is the voltage at which the breakdown strength of the TVS diode is triggered. It is usually specified as having a 50% probability of withstanding a specified surge. The breakdown voltage is usually between 6 to 24 volts for a single diode, or up to 40 volts for dual (bidirectional) diodes. The breakdown voltage is usually specified at 400 volts.The breakdown voltage of the TVS diode is determined by its junction structure and doping. It also depends on the amount and type of doping material that is used in the TVS diode. Different doping materials, such as boron, aluminum, etc., can be used to increase the breakdown voltage of the TVS diode.When overvoltage transients occur, the gate of the TVS diode will be quickly charged up to the breakdown voltage of the diode. The anode will also be charged up to the breakdown voltage. At this point, the diode conducts, the anode current will be increased and the cathode voltage will be decreased until the terminal voltage of the device is equal to the breakdown voltage. As soon as the cathode voltage is at its peak, the current stops flowing through the diode.The working principle of an MSMBG45A TVS diode is similar to that of other TVS diodes. It is designed to clamp electrostatic discharges down to 6 volts and to withstand pulse currents of more than 10 A. Its maximum sustained breakdown voltage rating is 40 V. Its peak pulse current rating is 1.2 kA, and it can withstand repetitive peak off-state voltages of up to 0.70 V. It can be used for a wide range of applications, such as in communications equipment, digital and analog signal processing, automotive and other consumer electronics, industrial equipment, and in automotive and avionics systems.In conclusion, TVS diodes provide a great solution for protecting sensitive electronic components from overvoltage transients. The MSMBG45A TVS diode is specifically designed to provide protection from overvoltage transients while maintaining optimal electrical performance. It can be used in a variety of applications, including communications equipment, digital and analog signal processing, automotive and other consumer electronics, industrial equipment, and in automotive and avionics systems.

The specific data is subject to PDF, and the above content is for reference

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