MSMBG51CAE3 Allicdata Electronics
Allicdata Part #:

1086-7930-ND

Manufacturer Part#:

MSMBG51CAE3

Price: $ 0.92
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 51V 82.4V DO215AA
More Detail: N/A
DataSheet: MSMBG51CAE3 datasheetMSMBG51CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
725 +: $ 0.83680
Stock 1000Can Ship Immediately
$ 0.92
Specifications
Voltage - Clamping (Max) @ Ipp: 82.4V
Supplier Device Package: SMBG (DO-215AA)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 7.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 56.7V
Voltage - Reverse Standoff (Typ): 51V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MSMBG51CAE3 is a type of Transient Voltage Suppressor (TVS) diode, which is designed to protect circuits and products from overvoltage caused by electrostatic discharge (ESD) and interference induced by electrical noise. It is designed to be a valuable protection solution for high speed data lines and low voltage circuits, such as USB, HDMI and Ethernet.The working principle of MSMBG51CAE3 is based on its ability to shunt the overvoltage applied on it to the ground circuit. The device consists of two serially connected P-type and N-type silicon epitaxial diodes, which can be activated when the applied voltage exceeds the breakdown voltage. When the overvoltage is applied to the diode, the P-type dopants will conduct electron current and the N-type dopants will conduct hole current. Thus, the blocking voltage of the device will be reduced and the differential voltage between anode and cathode will be increased until the breakdown voltage is reached. Then the electrons and holes will be free to flow and the shunt current will be generated.MSMBG51CAE3 can be used in various application fields, ranging from automotive and consumer electronics to industrial and medical applications. The device is suitable for a wide range of applications where surge protection and stability of the circuit are essential. It can be used to protect electronic circuitry against different ESD threats, such as lightning, static electricity, radiated and conducted emissions. It is also suitable for the protection of data lines including I/O, backplane and cable section, providing an excellent protection solution for high speed devices and low voltage circuits.MSMBG51CAE3 has excellent performance in terms of surge standoff voltage capability and clamping voltage capability, which ensures that the device can provide efficient protection even in extreme conditions. The device is also able to provide an adequate level of protection up to a frequency of 20MHz. Additionally, it has very low leakage current and capacitance, making it ideal for high speed data line requirements.In conclusion, MSMBG51CAE3 is an excellent choice for ESD protection and interference reduction in a wide range of applications. The device is capable of providing protection against ESD and electrical noise while maintaining a low leakage current and capacitance, making it ideal for high speed data line protection.

The specific data is subject to PDF, and the above content is for reference

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