| Allicdata Part #: | 1086-7930-ND |
| Manufacturer Part#: |
MSMBG51CAE3 |
| Price: | $ 0.92 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 51V 82.4V DO215AA |
| More Detail: | N/A |
| DataSheet: | MSMBG51CAE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 725 +: | $ 0.83680 |
| Voltage - Clamping (Max) @ Ipp: | 82.4V |
| Supplier Device Package: | SMBG (DO-215AA) |
| Package / Case: | DO-215AA, SMB Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 7.3A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 56.7V |
| Voltage - Reverse Standoff (Typ): | 51V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MSMBG51CAE3 is a type of Transient Voltage Suppressor (TVS) diode, which is designed to protect circuits and products from overvoltage caused by electrostatic discharge (ESD) and interference induced by electrical noise. It is designed to be a valuable protection solution for high speed data lines and low voltage circuits, such as USB, HDMI and Ethernet.The working principle of MSMBG51CAE3 is based on its ability to shunt the overvoltage applied on it to the ground circuit. The device consists of two serially connected P-type and N-type silicon epitaxial diodes, which can be activated when the applied voltage exceeds the breakdown voltage. When the overvoltage is applied to the diode, the P-type dopants will conduct electron current and the N-type dopants will conduct hole current. Thus, the blocking voltage of the device will be reduced and the differential voltage between anode and cathode will be increased until the breakdown voltage is reached. Then the electrons and holes will be free to flow and the shunt current will be generated.MSMBG51CAE3 can be used in various application fields, ranging from automotive and consumer electronics to industrial and medical applications. The device is suitable for a wide range of applications where surge protection and stability of the circuit are essential. It can be used to protect electronic circuitry against different ESD threats, such as lightning, static electricity, radiated and conducted emissions. It is also suitable for the protection of data lines including I/O, backplane and cable section, providing an excellent protection solution for high speed devices and low voltage circuits.MSMBG51CAE3 has excellent performance in terms of surge standoff voltage capability and clamping voltage capability, which ensures that the device can provide efficient protection even in extreme conditions. The device is also able to provide an adequate level of protection up to a frequency of 20MHz. Additionally, it has very low leakage current and capacitance, making it ideal for high speed data line requirements.In conclusion, MSMBG51CAE3 is an excellent choice for ESD protection and interference reduction in a wide range of applications. The device is capable of providing protection against ESD and electrical noise while maintaining a low leakage current and capacitance, making it ideal for high speed data line protection.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBG51CAE3 Datasheet/PDF