| Allicdata Part #: | 1086-7952-ND |
| Manufacturer Part#: |
MSMBG64AE3 |
| Price: | $ 0.77 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 64V 103V DO215AA |
| More Detail: | N/A |
| DataSheet: | MSMBG64AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 782 +: | $ 0.70076 |
| Voltage - Clamping (Max) @ Ipp: | 103V |
| Supplier Device Package: | SMBG (DO-215AA) |
| Package / Case: | DO-215AA, SMB Gull Wing |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 5.8A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 71.1V |
| Voltage - Reverse Standoff (Typ): | 64V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes, also known as Transient Voltage Suppression Diodes, are devices capable of suppressing electrostatic discharges up to very high levels. The MSMBG64AE3, which is a silicon avalanche television suppression diode, is a popular choice for many applications. It has an operating temperature range of -55 °C to 125 °C, and a forward operating voltage of 5.0V with an absolute maximum rating of 8.0V. The diode also features very low thermal resistance and a peak impulse power of 160 W (10/1000 μs). This makes it ideal for protecting sensitive circuits from high voltage transients and overloaded conditions.
The most common application for the MSMBG64AE3 are automotive, consumer electronics, telecommunications, and industrial applications. The diode can be used in a variety of situations such as routing through DC/AC power lines, setting up protection for signal lines, and providing lightning protection for equipment. It is also well-suited for high-speed transients, including surge transients on data and signal lines caused by electrostatic discharge and surges in motor applications.
The working principle of the MSMBG64AE3 is based on the avalanche breakdown phenomenon. When a very high voltage is applied across the terminals, the diode enters into avalanche breakdown and conducts a very large current. This high current causes the diode to switch sharply, making it ideal for applications requiring a fast response time. Furthermore, since the avalanche breakdown voltage is relatively low, it makes the diode suitable for applications that require protection from even relatively lower voltages.
The internal mechanism of the avalanche breakdown used in the MSMBG64AE3 is fairly simple. When the voltage across the terminals exceeds a certain threshold, the electric field builds up at the junction. This eventually causes the electrons to gain enough energy to overcome the barrier and collide with other electrons in the semiconductor. This collision causes an avalanche effect, producing a large avalanche current. This current then activates the avalanche voltage clamping action of the diode, which reduces the voltage before it can damage the circuitry.
The MSMBG64AE3 provides a wide range of protection from transients and overloads. It is designed to operate in both normal and abnormal modes, allowing it to offer exceptional protection even in high-risk applications. The diode can also handle transient surge currents up to 8 amps, making it well-suited for a variety of automotive and industrial applications. Furthermore, the diode’s low operating temperature ensures it can handle extreme temperature fluctuations without any significant loss in performance.
Overall, the MSMBG64AE3 is a reliable and dependable Transient Voltage Suppression Diode ideal for protecting sensitive circuits from high voltage transients and overloads. It has a wide operating temperature range and can handle transient surge currents up to 8 amps, making it well-suited for a variety of automotive, consumer electronics, telecommunications, and industrial applications. The MSMBG64AE3 features a simple working principle based on the avalanche breakdown phenomenon, which is triggered by exceeding a certain voltage threshold and results in a large avalanche current, activating the avalanche voltage clamping action.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBG64AE3 Datasheet/PDF