MSMBJ110A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transient voltage suppression (TVS) diodes are increasingly utilized to protect integrated circuits from external overvoltage conditions, like electrostatic discharge (ESD), lightning, and inductive load switching. The MSMBJ110A specifically is an ultra-low capacitance bidirectional TVS diode which is designed to protect sensitive components, fulfilling the IEC 61000-4-2 international standards. It is available in the customer-friendly and space saving form factor of the SMA and SMB packages.

The MSMBJ110A TVS diode exhibits peak power dissipation of up to 550 W at 10/1000 μs pulse width and has a peak pulse current of 11 A (8/20 μs). With a reverse stand-off voltage of 11 V, it has an impedance of 1.2 Ω @ 1000 V and 0.3 Ω @ 11 V.Working voltage range of the diode is from 5.0 to 14.5 V.

The MSMBJ110A TVS diode helps to protect sensitive components against voltage spikes and pulses. The diode can be utilized in numerous applications across many industries, from automotive and consumer electronics to telecommunications and industrial components. In automotive systems, it is frequently used in the DC power sticks, like for audio systems or front-end modules, to reject surge signals and protect against voltage transients. In consumer electronics, it can be found in Portable Devices, RC Toys and Wearables, to assist in protecting electronic components from ESD transients. Telecommunications equipment, such as base station transceivers, typically benefit from the protection of the MSMBJ110A against lightning surges. In industrial equipment, fields such as variable speed motor drives may benefit from the ruggedized package of the SMA/SMB outline and its fast response to voltage transients.

As the world moves towards making more and more devices smaller and smarter and as technology keeps evolving, we are increasingly prone to overvoltage conditions. The MSMBJ110A provides a robust, compact and highly reliable solution for these situations, helping to protect our electronics from possible damage.

Working Principle

The MSMBJ110A TVS diode works by utilizing a combination of electrical pressure and diffusion effects. When a reverse voltage is applied to the diode, a depletion region is created, as electrons move away from the area of applied voltage. As electric field increases, the electrodes start to move toward the area of applied voltage, increasing the current. This will eventually result in larger current, thereby clamping the voltage to a certain level and allowing protection of the sensitive components.

When a surge current is applied, the diode acts as a short circuit, allowing the current to flow through the diode. This pressurizes the diode and the breakdown voltage is seen. The voltage across the diode reaches saturation during the surge and it becomes an nonlinear device as the voltage is clamped to prevent further increase. The current flows through it until the surge dies out, and the diode returns to its non-conducting state.

The working voltage of the MSMBJ110A diode can be seen by its breakdown voltage, which is the point at which the diode starts conducting current. The maximum working voltage is limited by the Leakage Current (I). For the MSMBJ110A, the Leakage current is typically in the range of 30 μA to 40 μA.

Conclusion

The MSMBJ110A TVS diode is an effective device for protecting sensitive components against transients and overvoltage conditions. Its impressive reverse working voltage, low leakage current, fast response and low capacitance make it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference