MSMBJ12AE3 Allicdata Electronics
Allicdata Part #:

1086-8016-ND

Manufacturer Part#:

MSMBJ12AE3

Price: $ 1.39
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 12V 19.9V DO214AA
More Detail: N/A
DataSheet: MSMBJ12AE3 datasheetMSMBJ12AE3 Datasheet/PDF
Quantity: 61
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: $ 1.26630
10 +: $ 1.14471
25 +: $ 1.02211
Stock 61Can Ship Immediately
$ 1.39
Specifications
Voltage - Clamping (Max) @ Ipp: 19.9V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 30.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 13.3V
Voltage - Reverse Standoff (Typ): 12V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (transient voltage suppressors) diodes are specially designed to provide protection from electrostatic discharge and induced overvoltage transients. The MSMBJ12AE3 is a 12 volt unidirectional device specifically designed to protect the circuit from destruction due to overvoltage transients. The MSMBJ12AE3 is widely used in modern circuit protection designs due to its ability to handle high peak surge currents.

The MSMBJ12AE3 has a working voltage range of 6.0 – 13.6 volts, with a clamping voltage of 17 volts and a maximum pulse current rating of 600 amperes (Ippm). Its electrical characteristics include a low dynamic resistance (Rd) of 0.33 ohms and a low reverse leakage current of 1.6 microamperes. Its fast response time and high reliability make it an ideal choice for protecting sensitive electronic components and circuits from transient voltage events.

The typical application of the MSMBJ12AE3 is in protection from electrostatic discharge damage in applications where surge currents or voltages in excess of the rated parameters can occur. It is commonly found in automotive, telecommunications, industrial control and consumer electronic applications. It is also used to protect military and aerospace systems from spikes, surges and induced voltage transients.

The working principle of the MSMBJ12AE3 is relatively simple. When the circuit is subjected to an over-voltage transient, the diode clamps the voltage to the Zener voltage of the diode. By increasing the breakdown voltage (the voltage at which the junction will break down), the diode limits the peak voltage to the Zener voltage. By limiting the peak voltage, the energy stored in the transient is dissipated across the diode. This dissipates the energy of the transient and prevents further damage to the circuit.

In summary, the MSMBJ12AE3 is a 12 volt unidirectional TVS diode designed for protection against transient voltages. Its low dynamic resistance, low reverse leakage current, and fast response time make it the ideal choice for protecting sensitive electronic components and circuits from destruction due to overvoltage transients. Its application areas include automotive, telecommunications, industrial control, consumer electronic, military and aerospace systems. The MSMBJ12AE3 operates on a simple principle, where it clamps the voltage to the Zener voltage of the diode when subjected to an over-voltage transient, thus dissipating the energy of the transient and preventing further damage to the circuit.

The specific data is subject to PDF, and the above content is for reference

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