Allicdata Part #: | 1086-8051-ND |
Manufacturer Part#: |
MSMBJ17A |
Price: | $ 0.71 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 17V 27.6V DO214AA |
More Detail: | N/A |
DataSheet: | MSMBJ17A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
848 +: | $ 0.64602 |
Voltage - Clamping (Max) @ Ipp: | 27.6V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 21.7A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 18.9V |
Voltage - Reverse Standoff (Typ): | 17V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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MSMBJ17A Application Field and Working Principle
The MSMBJ17A is a Transient Voltage Suppression (TVS) diode, which is designed to protect sensitive components from high levels of electrical transients. The device is commonly used in automotive, telecommunications and audio/video equipment, as well as in DC power supply designs. It can also be used to protect the inputs to high-speed data converters, such as FM tuners and ADCs.
The MSMBJ17A is a single, unidirectional, Avalanche diode, with 5V reverse breakdown voltage and 1500W peak power dissipation. The low dynamic resistance (Eon) of the diode helps improve the transient suppression performance, while the low parasitic inductance and fast response time provide increased protection in high-speed applications. As well as a single device, a complete TVS diode array is also available, offering an enhanced level of protection.
When under normal conditions, the MSMBJ17A behaves like an ordinary diode, allowing current to flow in one direction. However, if the voltage applied to the device exceeds the reverse breakdown voltage (the 5V mentioned previously), the device will enter into avalanche mode. During this mode, the diode becomes a non-linear resistance, after which the voltage on the diode is clamped to a value slowly increasing above the breakdown voltage. As long as the energy of the transient isn\'t too great, and the voltage doesn\'t exceed the breakdown voltage, the device will remain in the avalanche mode. When the voltage drops below the breakdown voltage, the device will return to its normal linear mode.
The device is designed to absorb high levels of energy, dissipating up to 1.5KW peak power. This helps to ensure the protection of sensitive components, as well as downstream equipment. In addition to this, the device features a low dynamic resistance, which helps to reduce the voltage across the device, thus decreasing the potential for damage. The low parasitic capacitance and inductance of the diode also helps to reduce the interference with high-frequency signals, improving the performance of the system.
In conclusion, the MSMBJ17A is a single, unidirectional Avalanche diode, which is designed to protect sensitive components from high levels of electrical transients. Thanks to its low dynamic resistance, low parasitic capacitance and inductance, and fast response time, the MSMBJ17A is a great choice for high-speed applications, as well as DC power supply designs, automotive, telecommunications and audio/video equipment.
The specific data is subject to PDF, and the above content is for reference
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MSMBG16CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
MSMBG170CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 170V 275V DO215... |
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MSMBG17CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 17V 27.6V DO215... |
MSMBG18CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 18V 29.2V DO215... |
MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MSMBG20CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MSMBG22CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 22V 35.5V DO215... |
MSMBG22CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 22V 35.5V DO215... |
MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
MSMBG24CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
MSMBG26CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
MSMBG26CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
MSMBG28CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
MSMBG28CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
MSMBG30CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
MSMBG30CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
MSMBG33CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 33V 53.3V DO215... |
MSMBG33CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 33V 53.3V DO215... |
MSMBG36CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 36V 58.1V DO215... |
MSMBG36CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 36V 58.1V DO215... |
MSMBG40CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 40V 64.5V DO215... |
MSMBG43CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
MSMBG45CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 45V 72.7V DO215... |
MSMBG45CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 45V 72.7V DO215... |
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