MSMBJ28A/TR Circuit Protection |
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| Allicdata Part #: | MSMBJ28A/TRMS-ND |
| Manufacturer Part#: |
MSMBJ28A/TR |
| Price: | $ 0.79 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS |
| More Detail: | N/A |
| DataSheet: | MSMBJ28A/TR Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 800 +: | $ 0.72117 |
| Current - Peak Pulse (10/1000µs): | 13.2A |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Clamping (Max) @ Ipp: | 45.4V |
| Voltage - Breakdown (Min): | 31.1V |
| Voltage - Reverse Standoff (Typ): | 28V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
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TVS - Diodes, or Transient Voltage Suppresser Diodes, are a type of diode specifically optimized and designed to provide fast, effective protection from over-voltage transients in power and electronic systems. The MSMBJ28A/TR is a uni-directional, 400W component that offers low-capacitance protection against over-voltage transients. It is ideal for use in 5V, 10V and 20V applications, such as AC/DC wall adapters, Ethernet ports, digital cameras, and modems.
Application Field
The MSMBJ28A/TR is ideal for use in electronic systems where the impacts of transient overvoltage bring a risk of loss or damage to the circuit or surrounding component. These electric or electro-mechanical systems generally belong to the following categories:
- Consumer electronic equipment
- Telecom systems
- Industrial process control
- Global Positioning System (GPS)
- Aircraft, aerospace, and military
- Avionics and local area networks (LAN)
- Computer and peripheral equipment
The MSMBJ28A/TR is especially useful for applications involving high-speed data and power interfacing. As a uni-directional diode, it can be used in most types of equipment where protection from transient voltage overshoots is necessary. Common applications include:
- Protection against Electrostatic Discharge (ESD)
- Circuit protection against over-voltage transients
- Surge protection in audio equipment
- Protection against lightning induced surges
Working Principle
The MSMBJ28A/TR operates on the principle of ‘reverse filamentary breakdown conduction’. This means that the component can effectively absorb and manage the power resulting from over-voltage pulses and distribute it over a large area. As a result, it reduces the voltage stresses on the circuit and its components.
When the applied voltage reaches the component’s ‘breakdown voltage’, electrical current begins to flow through the diode. Within nanoseconds (10-9s), the diode starts to act as a closed switch which limits the voltage to a safe level. This process continues until the transient voltage is discharged or absorbed.
The MSMBJ28A/TR also has an avalanche breakdown voltage which triggers at a lower voltage than the standard breakdown. These two breakdowns work in conjunction with each other, providing trustworthy and effective protection against transient over-voltage.
The main advantages of the MSMBJ28A/TR are its low capacitance rating- typically around 10pF- and, due to its symmetrical design, its relatively low clamping voltage of 28V. This makes the component suitable for high-speed data applications in which signal integrity and relative efficiency are essential.
In conclusion, the MSMBJ28A/TR uni-directional diode is a reliable and affordable option for protecting electrical and electro-mechanical systems in consumer, telecommunication, and commercial applications from high-voltage transients and over-voltage pulses. Its uniquely designed structure offers low clamping voltage, low capacitance, and a symmetrical design that ensures maximum signal integrity. This reliable protection makes the MSMBJ28A/TR ideal for use in a broad range of electronic systems.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBJ28A/TR Datasheet/PDF