MSMBJ28AE3 Allicdata Electronics
Allicdata Part #:

1086-8076-ND

Manufacturer Part#:

MSMBJ28AE3

Price: $ 0.71
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 28V 45.4V DO214AA
More Detail: N/A
DataSheet: MSMBJ28AE3 datasheetMSMBJ28AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
848 +: $ 0.64602
Stock 1000Can Ship Immediately
$ 0.71
Specifications
Voltage - Clamping (Max) @ Ipp: 45.4V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 13.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 31.1V
Voltage - Reverse Standoff (Typ): 28V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes, also known as transient voltage suppressors, are voltage protection devices designed to protect sensitive electronics from the damaging effects of ESD (electrostatic discharge), EFT (electrical fast transient), and EMI (electromagnetic interference). The MSMBJ28AE3 is a single unidirectional type transient voltage suppressor diode that is designed to protect components from voltage transients induced by lightning and other transient voltage events.

The MSMBJ28AE3 device is constructed of an oxide-passivated silicon substrate in a hermetically sealed, hermetically sealed, SOT-23 package. It is also an easy-to-use semiconductor component that provides superior, reliable protection for sensitive electronic components that are subjected to high voltage transients. The device is designed for applications with voltages in the range of 5.0 to 27.0 volts.

The MSMBJ28AE3 is designed for two operation modes: Off-State (or static) and On-State (or dynamic). In Off-State mode, the MSMBJ28AE3 is typically in a reverse bias state where the current is extremely low. In On-State mode, the diode is typically in a forward bias state and the current is significantly higher.

When subjected to a voltage pulse, the MSMBJ28AE3 diode is able to absorb and dissipate the pulse energy by conducting current across a reverse-biased junction. This process is called “avalanche breakdown” since the incident energy is so high that the junction appears to break down abruptly. The breakdown of the junction helps to dissipate the pulse energy and clamp the voltage pulse, thus providing protection to the circuit from high voltage transients.

The MSMBJ28AE3 is well suited for protecting sensitive electronic components and equipment from voltage transients induced by lightning strikes, AC power line surges, and other common sources of EMI and EFT. The device’s low reverse leakage, low capacitance, and fast response time make it ideal for high-frequency high-voltage transient protection applications. It is also very easy to use, with no additional external components or wires required for assembly.

The MSMBJ28AE3 is a robust and reliable transient voltage suppressor diode that provides superior protection from high voltage transients and helps ensure the long-term operation of sensitive electronic components and equipment. Its low capacitance and fast response time make it an ideal choice for high-frequency high-voltage transient protection applications.

The specific data is subject to PDF, and the above content is for reference

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