MSMBJ30CAE3 Allicdata Electronics
Allicdata Part #:

1086-8092-ND

Manufacturer Part#:

MSMBJ30CAE3

Price: $ 0.76
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 30V 48.4V DO214AA
More Detail: N/A
DataSheet: MSMBJ30CAE3 datasheetMSMBJ30CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
794 +: $ 0.68981
Stock 1000Can Ship Immediately
$ 0.76
Specifications
Voltage - Clamping (Max) @ Ipp: 48.4V
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 12.4A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 33.3V
Voltage - Reverse Standoff (Typ): 30V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MSMBJ30CAE3 Application Field and Working Principle

MSMBJ30CAE3 is a Transient Voltage Suppressing Diode (TVS Diode) suitable for a variety of different electronic applications. It is used to transiently suppress voltage transients occurring in data lines, power supplies, signal lines, and other applications where high-pulse current is present. The diode is capable of handling peak pulse currents up to 600 volts with reverse stand-off voltage ratings of 30 volts. This makes it an ideal diode for suppressing transient voltages during surges and transients.

The working principle behind this type of diode is known as the Avalanche Breakdown. The diode is designed with a special avalanche breakdown layer inside which has a voltage breakdown level that is lower than the one of the Zener region that is present in other type of diode. The avalanche breakdown layer consists of a semiconductor material that has an electron mobility slightly higher than the base material it is in contact with. When current passes through the diode, it will cause electrons to start flowing through this avalanche layer creating an internal avalanche breakdown that will limit the amount of voltage being applied.

In a practical scenario, the MSMBJ30CAE3 diode is used for the transient suppression of voltages. As an example, it can be used in new data lines that have high-speed transients or surges. This diode offers low turn-on times, high-speed response and low noise. It is also suitable for reverse current application.

The advantages of using this type of diode include the fact that it is quite capable of suppressing very high ESD voltages. It has a very low clamping voltage, up to 30 volts. It is also quite small and lightweight, offering easy installation and a reliable form of protection. Additionally, these diodes are cost effective compared to other types of transient protection.

In conclusion, the MSMBJ30CAE3 is a versatile, cost-effective TVS diode suitable for suppressing transient voltage transients, ESD protection, and reverse current applications. It is small, lightweight, and offers high-speed response and low noise. It is highly recommended for new data lines, power supplies and signal lines where protection against transient voltages is needed.

The specific data is subject to PDF, and the above content is for reference

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