MSMBJ40CAE3 Circuit Protection |
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Allicdata Part #: | 1086-8104-ND |
Manufacturer Part#: |
MSMBJ40CAE3 |
Price: | $ 0.76 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 40V 64.5V DO214AA |
More Detail: | N/A |
DataSheet: | MSMBJ40CAE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
794 +: | $ 0.68981 |
Voltage - Clamping (Max) @ Ipp: | 64.5V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 9.3A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 44.4V |
Voltage - Reverse Standoff (Typ): | 40V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The MSMBJ40CAE3 TVS diode is a two-terminal unidirectional device used to protect sensitive electronics from high voltage transients. It offers more than 40000 watts of peak pulse power for the duration of a few microseconds and it has an operating voltage of 400 volts.
The MSMBJ40CAE3 is an ultra-low capacitance diode with an breakdown voltage of 40 Volts. It is designed for use in high speed data lines such as USB or IEEE1394 and is also suitable for industrial applications where extreme levels of ESD and transients are encountered.
The working principle of the MSMBJ40CAE3 is that when exposed to a transient voltage spike, the device turns on and provides a low impedance path to ground. This protects the sensitive electronic components, and, at the same time, allows the transient voltage to be safely discharged into the ground without causing any damage.
In order to reduce the discharge current to a safe level, the MSMBJ40CAE3 is constructed with a reverse blocking diode and an ESD protection diode. This ensures that the maximum permissible power dissipated is limited to the maximum specified value for the device, thus protecting the device from overheating.
The main application areas of the MSMBJ40CAE3 include high speed data line ESD protection, industrial applications such as automotive and aerospace, and cellular phone and smart phone protection. The device also finds its application in portable medical equipment, LC/LCD display protection, and various communications interfaces.
The MSMBJ40CAE3 is a valuable tool in the protection of sensitive electronics from rapidly varying voltage transients and ESDs in the environments mentioned above. It is easy to install, cost effective, and has a wide range of working voltages. The device is also characterized by high peak pulse power capabilities, making it an ideal choice for the protection of sensitive electronic components.
The specific data is subject to PDF, and the above content is for reference
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MSMBG15CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
MSMBG15CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
MSMBG160CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 160V 259V DO215... |
MSMBG160CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 160V 259V DO215... |
MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
MSMBG16CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
MSMBG170CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 170V 275V DO215... |
MSMBG170CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 170V 275V DO215... |
MSMBG17CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 17V 27.6V DO215... |
MSMBG17CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 17V 27.6V DO215... |
MSMBG18CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 18V 29.2V DO215... |
MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MSMBG20CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MSMBG22CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 22V 35.5V DO215... |
MSMBG22CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 22V 35.5V DO215... |
MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
MSMBG24CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
MSMBG26CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
MSMBG26CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
MSMBG28CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
MSMBG28CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
MSMBG30CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
MSMBG30CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
MSMBG33CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 33V 53.3V DO215... |
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MSMBG36CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 36V 58.1V DO215... |
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MSMBG45CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 45V 72.7V DO215... |
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