| Allicdata Part #: | 1086-8135-ND |
| Manufacturer Part#: |
MSMBJ6.0CA |
| Price: | $ 1.49 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 6V 10.3V DO214AA |
| More Detail: | N/A |
| DataSheet: | MSMBJ6.0CA Datasheet/PDF |
| Quantity: | 200 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | $ 1.35450 |
| 10 +: | $ 1.22220 |
| 25 +: | $ 1.09141 |
| 100 +: | $ 0.98236 |
| Voltage - Clamping (Max) @ Ipp: | 10.3V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 58.3A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 6.67V |
| Voltage - Reverse Standoff (Typ): | 6V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TVS (transient voltage suppressor) diodes are an important tool in the field of circuit protection. These devices provide a first line of defense against overvoltage and overcurrent events that can cause damage in electrical and electronic equipment. The MSMBJ6.0CA is one of the newest series of TVS diodes, offering improved performance and greater design flexibility. In this article, we will discuss the application field and working principles of the MSMBJ6.0CA.
The MSMBJ6.0CA is designed to provide overvoltage and overcurrent protection in a variety of applications. It can be used to protect circuits against transient voltages caused by electrostatic discharge (ESD), electro-magnetic interference (EMI) and other sources of high voltage. The diode also provides protection against overcurrent, preventing damage to components caused by excessive current flow. Additionally, the device can be used to eliminate “ticking” in audio applications, providing a smooth transition between components.
The MSMBJ6.0CA is capable of handling up to 500 watts of power, and can dissipate up to 50 amperes of current. It has a breakdown voltage of 6 volts, meaning that it can suppress transient voltages below 6 volts. The device also features a low capacitance profile, which improves its ability to suppress electromagnetic interference (EMI) and resets quickly after an overvoltage condition.
The MSMBJ6.0CA utilizes a PN junction structure, a common type of diode structure. This type of diode contains a “P” layer and a “N” layer. The junction has a built in voltage drop, which acts as a barrier to current flow. When a forward biased voltage is applied, current will flow in one direction through the diode. If the voltage is reversed, current will not flow. This allows the device to suppress high voltages and protect the circuitry it is connected to.
In addition to its PN junction structure, the MSMBJ6.0CA also incorporates avalanche and zener doping technologies. Avalanche diodes use a “reverse-biased” voltage to create a large number of “charge carriers” that flow through the PN junction in a controlled manner. Zener diodes create a “valley” in the electric field inside the diode that allows current to flow when the applied voltage reaches a certain level. The combination of these two technologies allows the device to provide dependable overvoltage protection while minimizing the capacitance associated with typical TVS diodes.
The MSMBJ6.0CA can be used in a variety of applications, including protection of DC/DC converters, AC/DC power supplies, cabling and audio circuits. It is an ideal solution for portable electronic devices that require protection against ESD, EMI and other sources of overvoltage or overcurrent. The device is also capable of suppressing power surges caused by lightning, ensuring reliable power delivery to connected components.
The MSMBJ6.0CA is a reliable and effective way to protect circuit components from damaging transient voltages and high current. It utilizes a combination of technologies to provide robust protection against both overvoltage and overcurrent while minimizing capacitance. Its wide range of applications makes it a versatile choice for designers looking for a reliable solution to their various circuit protection requirements.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBJ6.0CA Datasheet/PDF