| Allicdata Part #: | 1086-8145-ND |
| Manufacturer Part#: |
MSMBJ64A |
| Price: | $ 0.71 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 64V 103V DO214AA |
| More Detail: | N/A |
| DataSheet: | MSMBJ64A Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 848 +: | $ 0.64602 |
| Voltage - Clamping (Max) @ Ipp: | 103V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 5.8A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 71.1V |
| Voltage - Reverse Standoff (Typ): | 64V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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The MSMBJ64A is a Transient Voltage Suppressor (TVS) diode built on a state-of-the-art technology that enables it to protect any microcontroller or digital circuitry from high voltages, surges, and EMI (electromagnetic interference). This is of particular importance for devices used in a wide variety of applications, from automotive electronic systems to industrial controllers and data acquisition systems.
The MSMBJ64A has a wide operating voltage range from 6.0V up to 22V and can withstand high peak powers up to 600W. It has a very low operating current of 150mA max and low capacitance of 5 pF max @ 5V, which makes it ideal for protecting digital circuits from voltage transients.
The MSMBJ64A offers superior protection from high-voltage transients, both differential and common-mode, by clamping them to a safe voltage range. It is designed to guard sensitive equipment against sudden, temporary changes in power flow, also known as surges, spikes, or noise. Additionally, it provides a large amount of protection against EMI that could cause interference with signal lines.
The MSMBJ64A is designed to facilitate the design and implementation of TVS protection circuitry for any application requiring surge protection and EMI noise reduction. Its double-diffused, low-voltage P-channel MOSFET structure, six integrated SBDs, and an additional thermal element ensures superior dynamic performance and low-level noise immunity. These features make the MSMBJ64A a great choice for any application in which low power dissipation, cost effectiveness, and immunity to EMI are all essential factors.
The MSMBJ64A works by providing a non-linear voltage-current relationship that allows it to reduce excess voltages down to safe levels. This allows the device to respond to a voltage transient or surge and dissipate the extra energy into a resistor which then acts as a load across the transient or surge. This process occurs very quickly, which offers the necessary protection from voltage transients or EMI noise.
The MSMBJ64A has a wide range of applications in the automotive, consumer electronics, industrial, and medical markets. It can be used for protecting all types of digital and logic circuits, for example, microcontrollers, data acquisition systems, and any other type of device using digital logic. It is also well suited for providing surge protection to DC-in power converters, as well as protection for sensitive equipment such as motors, solenoids, and relays.
In summary, the MSMBJ64A is an excellent TVS diode with a range of features that make it well-suited for a variety of applications requiring surge protection and EMI noise reduction. With a wide operating voltage range, high peak power rating, low operating current, and low capacitance, it offers an effective solution for protecting digital circuitry from high voltage transients and EMI noise. Additionally, its double-diffused, low-voltage P-channel MOSFET structure, six integrated SBDs, and an additional thermal element ensures superior dynamic performance and low-level noise immunity, making it a wise choice for any application requiring TVS protection.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBJ64A Datasheet/PDF