| Allicdata Part #: | 1086-8178-ND |
| Manufacturer Part#: |
MSMBJ85AE3 |
| Price: | $ 0.71 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 85V 137V DO214AA |
| More Detail: | N/A |
| DataSheet: | MSMBJ85AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 848 +: | $ 0.64602 |
| Voltage - Clamping (Max) @ Ipp: | 137V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 4.4A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 94.4V |
| Voltage - Reverse Standoff (Typ): | 85V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS (Transient Voltage Suppressor) diodes are one of the most important components in electrostatic discharge and electrical transient protection. Generally, TVS diodes are categorized as solutions for protecting against over-voltage and over-current surges. The MSMBJ85AE3 is a bi-directional, unidirectional, and bidirectional TVS diode from the semiconductor company ON Semiconductor. The device is designed to protect electrostatic discharge, surges, transients, and electrical over-voltage in a variety of applications, including automotive, consumer electronics, and high-tech signal and data transmission systems. MSMBJ85AE3 is available in both SOT-323 and SC-70 packages.
The MSMBJ85AE3 TVS diode consists of a PN junction diode configured in a two-pin package. It is designed to clamp high peak transient voltages and dissipate large Peak Pulse powers. The device is a monolithic, bidirectional, symmetrical, unidirectional, or dual common-cathode TVS constructed of silicon avalanche rectifiers. It has a maximum breakdown voltage of 85V and a maximum peak pulse power rating of 600W.
The MSMBJ85AE3 TVS diode operates in a very simple fashion. When it comes into contact with an over-voltage surge, it will act as a non-linear voltage-limiting device to protect the connected circuit. The diode will draw a low current from the surge voltage to protect the circuit. Once the voltage returns to the normal operating range, the diode will quickly reset itself and be ready to protect the circuit against future surges.
The design of the MSMBJ85AE3 TVS diode provides it with several key advantages. It has a very fast response time, allowing it to respond to transients quickly and accurately. Additionally, the diode has a very low clamping voltage, allowing it to absorb energy from the surge without adversely affecting the circuit\'s normal operation. It also has a low dynamic resistance, meaning that it can absorb large amounts of energy and dissipate the energy safely. Lastly, the MSMBJ85AE3 TVS diode is relatively inexpensive and can be used in a wide variety of applications.
The MSMBJ85AE3 TVS diode is commonly used in automotive applications, consumer products, and high-tech signal and data transmission systems. In automotive applications, the diode is used to protect circuits that may be affected by over-voltage, surges, electrical transients, and electrostatic discharge. This can include boosting the car\'s radio reception, preventing short circuits, and protecting vulnerable components from damage. Consumer products commonly use the diode for over-voltage protection, surge protection, and transient protection, as well as protecting against electrostatic discharge.
Lastly, MSMBJ85AE3 TVS diodes are used in high-tech signal and data transmission systems. In such systems, the diode acts as a non-linear voltage limiter, clamping high-frequency transients and preventing them from adversely affecting sensitive components. The diode also acts as a low-pass filter, removing any undesired high-frequency components.
In summary, the MSMBJ85AE3 is a bi-directional, unidirectional, and bidirectional TVS diode from the semiconductor company ON Semiconductor. It is designed to clamp high peak transient voltages and dissipate large Peak Pulse powers, while providing excellent protection against over-voltage, surges, electrical transients, and electrostatic discharge. It is commonly used in automotive, consumer, and communications applications, where it is able to provide effective protection and performance.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBJ85AE3 Datasheet/PDF