| Allicdata Part #: | 1086-8194-ND |
| Manufacturer Part#: |
MSMBJSAC15E3 |
| Price: | $ 2.20 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 15V 23.6V DO214AA |
| More Detail: | N/A |
| DataSheet: | MSMBJSAC15E3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 321 +: | $ 2.00001 |
| Voltage - Clamping (Max) @ Ipp: | 23.6V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | 30pF @ 1MHz |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 500W |
| Current - Peak Pulse (10/1000µs): | 20A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 16.7V |
| Voltage - Reverse Standoff (Typ): | 15V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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The MSMBJSAC15E3 TVS diode is a positively triggered, uni-directional, low capacitance, transorb diode. It protects sensitive electronic components from high voltage transients and currents. The MSMBJSAC15E3 is suitable for automated surface mounting processes with a flammability rating of UL 94V-0.
The MSMBJSAC15E3 is specifically designed to protect sensitive electronics from high-voltage transients and currents that accompany transorb waveforms. This diode utilizes a SMA package, which is the industry standard for low-capacitance TVS protection. It features a low clamping voltage, a low peak pulsed current, and a low dynamic impedance.
The MSMBJSAC15E3 is available in a wide variety of mounting options. It has a single SMA package with 3 pins for connection and provides superior electrical performance. It is designed with a patented positive spike-triggered structure that minimizes current peaks and reduces the ESD-induced voltage. This diode also features low leakage currents for enhanced noise immunity and improved ESD protection.
The MSMBJSAC15E3 is designed to protect sensitive electronic components from damaging transients and currents. It has a peak pulse current rating of 8A (tp=8/20µs), a clamping voltage of 7.55V (tp=8/20µs), and a dynamic impedance of 10Ω minimum at 1.2/50µs waveform. Additionally, this diode has a low leakage current of 0.5mA (at V=3V, T=25°C).
In terms of working principle, the MSMBJSAC15E3 is designed to protect sensitive electronic components from transorb waveforms with its low-capacitance SMA package. When a powered system experiences a positive voltage spike, or shock, the MSMBJSAC15E3 will conduct the peak current, thus protecting the system from damage. This diode features a patented positive spike-triggered structure that reduces peak current and minimizes ESD-induced voltage. The diode is also designed to have a low dynamic impedance, which allows the current to flow quickly and more efficiently, reducing the risk of damage to sensitive components.
In terms of application, the MSMBJSAC15E3 is suitable for a variety of applications due to its low-capacitance SMA package, low clamping voltage, low peak pulsed current, and low dynamic impedance. It is exceptionally well suited for ESD protection, particularly for the protection of telecom, wireless, networking, and other sensitive electronic components. It is also widely used in automotive and military applications.
To summarize, the MSMBJSAC15E3 is a positive-triggered, uni-directional, low-capacitance TVS diode. It offers protection from high-voltage transients and currents with a low clamping voltage, low peak pulsed current, and low dynamic impedance. It is available in a variety of mounting options and has a wide range of applications in telecom, automotive, military, and other sensitive electronic component systems. This diode utilizes a patented positive spike-triggered structure that minimizes current peaks and reduces the ESD-induced voltage.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
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MSMBJSAC15E3 Datasheet/PDF