MSMCJ90AE3 Allicdata Electronics
Allicdata Part #:

1086-8670-ND

Manufacturer Part#:

MSMCJ90AE3

Price: $ 1.12
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 90V 146V DO214AB
More Detail: N/A
DataSheet: MSMCJ90AE3 datasheetMSMCJ90AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
596 +: $ 1.01871
Stock 1000Can Ship Immediately
$ 1.12
Specifications
Voltage - Clamping (Max) @ Ipp: 146V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 10.3A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 100V
Voltage - Reverse Standoff (Typ): 90V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (Transient Voltage Suppression) diodes are designed to protect sensitive electronic circuits from transient overvoltage. They provide a protection function that is the same as other forms of surge protection. However, TVS diodes are more reliable, faster, and less expensive than other forms of surge protection. The MSMCJ90AE3 is a TVS diode that is designed for its low capacitance in both low power and high power applications.

The MSMCJ90AE3 is an ultra low capacitance, low capacitance diode. It has a maximum working voltage of 900 volts and is designed for both medium and low power applications. It has a wide range of forward and reverse blocking levels, making it suitable for use in many high-power circuits. It is also designed with low power consumption and high efficiency, making it ideal for use in portable and low power applications.

The MSMCJ90AE3 has a peak pulse power of 9.0 kilowatts and a peak pulse current of 1.5 kiloamps. The diode has a reverse breakdown voltage of 900V and a voltage clamping range of 1000V. The forward current capability is 10A and the reverse current capability is limited to 5mA. The forward clamped voltage is 250V-1V and the reverse clamped voltage is 900V-3V. The device is rated for temperatures from -40°C to 150°C.

The MSMCJ90AE3 is designed for low capacitance, high speed switching, and efficient protection from transients. Due to its low capacitance, it can be used in high speed circuits such as DC-DC converters, power supplies, and motor control systems. The low capacitance also reduces the risk of overvoltage energy resulting from an inductive load. The MSMCJ90AE3 provides superior performance in both high and low power applications by its high working voltage and high peak pulse power capabilities, and its low capacitance values.

The working principle of the MSMCJ90AE3 is based on the principle of avalanche breakdown. When an excess voltage is applied to the diode, the increasing electric field, due to the excess voltage, will cause electrons to be knocked off the diode junction. This will cause the diode to become conductive and the excess voltage is clamped across the diode. This will limit the potential voltage across the protected device and protect it from overvoltage conditions.

The MSMCJ90AE3 is a great device for use in high and medium power, high speed switching applications and provides protection from transient overvoltage conditions. It has a low capacitance allowing it to be used in high speed circuits such as DC-DC converters, power supplies, and motor control systems. The low capacitance also reduces the risk of overvoltage energy resulting from inductive loads. The MSMCJ90AE3 provides superior performance in both high and low power applications by its high working voltage and high peak pulse power capabilities and its low capacitance values.

The specific data is subject to PDF, and the above content is for reference

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