MSMCJLCE45A Allicdata Electronics
Allicdata Part #:

1086-8725-ND

Manufacturer Part#:

MSMCJLCE45A

Price: $ 3.60
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 45V 72.7V DO214AB
More Detail: N/A
DataSheet: MSMCJLCE45A datasheetMSMCJLCE45A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
218 +: $ 3.26750
Stock 1000Can Ship Immediately
$ 3.6
Specifications
Voltage - Clamping (Max) @ Ipp: 72.7V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 20.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MSMCJLCE45A is a low capacitance 5.0 Kilovolt (kV) transient voltage suppressor (TVS) diode. It is designed to protect sensitive electronics from transient voltage events. It is a low power, low capacitance diode designed for telecommunications and other high quality applications.

The MSMCJLCE45A offers a fast response time to high and low voltage transients helping to protect against electrostatic discharge, lightning, and high occurrences of electro-magnetic interference (EMI) or radio frequency interference (RFI). As well as being a low power device, the MSMCJLCE45A also provides a low capacitance of about 2.0 picofarad (pF) for fast signal switching with minimal impact to circuit operation.

Applications of the MSMCJLCE45A include telecommunications, computer peripherals, databus, SMART card readers, audio and video equipment, ZigBee networks, RF signal runs, and point-of-sale terminals. It is suitable for a wide temperature range from -65°C to +150°C and is also capable of withstanding a high peak pulse current of 100A with a peak pulse voltage of 5000V.

The working principle of the MSMCJLCE45A is based on its breakdown voltage. This breakdown voltage is the voltage at which electrons break down through the material and form an avalanche. When the voltage reaches the diode\'s breakdown point, it triggers an avalanche effect in the semiconductor. This allowance of electrons is what protects the device from further voltage transients.

The working principle of the MSMCJLCE45A diode is also based on the positive temperature coefficient (PTC) effect. This effect is when the material\'s thermal properties increase with higher temperatures. The resistance of the material increases with temperature, which helps to protect it from further current transients. This self protection mechanism helps to boost the protection reliability of the diode.

As a TVS diode, the MSMCJLCE45A is designed to protect against transient voltage events. It has a breakdown voltage of 5.0 kV and it also offers low capacitance, fast response time, and a wide temperature range. It is suitable for various applications such as telecommunications, computer peripherals, databus, ZigBee networks, and RF signal runs, and can withstand high peak pulse currents and peak pulse voltages.

The specific data is subject to PDF, and the above content is for reference

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