MT29E256G08CECCBH6-6:C TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	256Gb (32G x 8)
Clock Frequency:	167MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)

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Memory is an elementary part of computing system, fundamental for data storage and processing. The MT29E256G08CECCBH6-6:C TR is a high-performance memory device that combines a large number of memory cells with several memory controllers. It has wide applications in embedded systems, automotive, consumer electronics, wireless communication, industrial control, medical equipment, and more. This article will discuss the application field of the MT29E256G08CECCBH6-6:C TR and the working principle of its memory cells. In embedded systems, MT29E256G08CECCBH6-6:C TR integrates with its memory controllers to provide high-precision and low-power embedded memory. Its application field also covers automotive and consumer electronics. As entertainment systems and driving control become more complex, reliable data storage and processing technology is needed to raise these systems’ performance to another level. The MT29E256G08CECCBH6-6:C TR plays a role here. Its large capacity and low power usage can reduce costs and save power.The MT29E256G08CECCBH6-6:C TR memory also finds applications in wireless communication. Reliable data communication between systems is essential in military and emergency scenes, as well as in complex situations such as telemedicine, automated driving, and more. The MT29E256G08CECCBH6-6:C TR memory is capable of providing high-precision data transmission and reliable data storage for these wireless communicational tasks.Industrial control systems such as factory automation and urban engineering rely on reliable memory to ensure stable performance. The MT29E256G08CECCBH6-6:C TR memory is able to provide smooth data storage and transmission in industrial control applications, as it is built with quality control technology.Medical equipment often requires high-precision data processing, which requires a reliable memory system. The MT29E256G08CECCBH6-6:C TR memory is suitable for such situations, as it is capable of providing high-precision data storage and fast data transmission in a low-power consumption environment.The MT29E256G08CECCBH6-6:C TR memory is built with NAND flash memory chips, each containing a large number of memory cells. A NAND flash memory cell is a type of flash memory which utilizes a floating-gate cell to store data. Each cell consists of a control gate and a floating gate, separated by a thin silicon oxide layer. The control gate is connected to a transistor, which controls the flow of electrons to and from the cell. The floating gate stores the electrical charge which represents the 0’s and 1’s of the digital data stored in the cell.When the transistor is activated, electron charges flow from the control gate to the floating gate and the data stored in the cell is read. If a write operation is requested, electrons are pushed into the floating gate, changing the stored charge and thus the state of the data in the cell. Thisability of the transistors to control the flow of electrons to and from the floating gate is the working principle of the NAND flash memory.In conclusion, MT29E256G08CECCBH6-6:C TR memory is an efficient and reliable memory device with a wide range applications including embedded systems, automotive, consumer electronics, wireless communication, industrial control, medical equipment, and more. Its memory cells are built with NAND flash memory, which utilizes transistors to control the flow of electrons to and from the cells’ floating gate and thereby control the data stored in them.

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