MT29F1G16ABCHC-ET:C Allicdata Electronics
Allicdata Part #:

MT29F1G16ABCHC-ET:C-ND

Manufacturer Part#:

MT29F1G16ABCHC-ET:C

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 1Gb (64M x 16) Parallel 6...
DataSheet: MT29F1G16ABCHC-ET:C datasheetMT29F1G16ABCHC-ET:C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA
Base Part Number: MT29F1G16
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT29F1G16ABCHC-ET:C is a type of memory used in many different applications. Its characteristics make it an ideal choice for tasks that require high speed, low latency and large data storage capabilities. This type of memory is also capable of providing reliable data retrieval with a longer lifespan than other conventional memory solutions.

Overview of the MT29F1G16ABCHC-ET:C

The MT29F1G16ABCHC-ET:C is a 3D NAND-based memory chip from Toshiba. This type of memory has a 16-Gigabit device with a 3D NAND structure, which is designed to enable higher densities, better endurance, and improved performance. It has a 64-gigabyte capacity with a cell size of four gigabits and an input/output speed of up to 40 MB/s.

The memory chip has a 1Gb (128Mb) page size and a 64KiB physical block size, which is important for storing large amounts of data reliably and efficiently. Its 4K random read performance is at least a thousand times better than that of conventional hard drives. The MT29F1G16ABCHC-ET:C has a write endurance of up to 32TB and a data retention time of 10 years, making it an ideal choice for applications that require long-term data retention.

Applications of the MT29F1G16ABCHC-ET:C

The MT29F1G16ABCHC-ET:C is mainly used for applications related to embedded systems, data centres, cloud computing, and industrial automation. Its high-performance characteristics make it suitable for these applications, which need high speed and reliable data access.

This type of memory is used in consumer electronics and medical products, such as smart phones, tablets, and medical imaging equipment. Its memory cell design provides improved endurance and performance, even in high demand environments. It is also used in enterprise applications, such as server-side and cloud storage systems, which require faster data access and long-term data retention.

The MT29F1G16ABCHC-ET:C is also widely used in automotive systems, such as infotainment, navigation, and backup cameras. The memory chip can be integrated into the system for reliable operation in challenging environments where vibration, high temperatures, and shock are present. Its high-speed operation, low latency, and large capacity enable high performance and reliable operation, making it an ideal choice for automotive applications.

Working Principle of the MT29F1G16ABCHC-ET:C

The MT29F1G16ABCHC-ET:C is a 3D NAND type of memory. It has four memory cells in a single die, which provide improved performance and data storage density compared to conventional memory solutions. This type of memory is divided into four planes, and each plane has a separate input/output path. The parallel architecture of the chip enables high-speed operation, low latency, and high storage capacity.

The memory chip has an asynchronous write operation which enables reliable data storage with lower latency. The device can write concurrently in all four planes, and with a page size of 1Gb (128Mb), large amounts of data can be written quickly and reliably. The MT29F1G16ABCHC-ET:C also features an algorithm for error correction, which ensures data integrity and accuracy.

The MT29F1G16ABCHC-ET:C has memory cells with high endurance and long data retention times, making it an ideal choice for applications that require longer periods of data storage. The chip also has an enhanced feature for reading data, which allows it to efficiently read data even in different environments.

Conclusion

The MT29F1G16ABCHC-ET:C is a type of memory that is used in a variety of applications. Its characteristics are well suited for applications that require high speed, low latency, and large data storage capabilities. This type of memory is used in embedded systems, data centres, cloud computing, and industrial automation, as well as automotive systems. Its features enable reliable operation in challenging environments, and its large capacity allows for the storage of large amounts of data.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "MT29" Included word is 40
Part Number Manufacturer Price Quantity Description
55A1121-12-MT29CS2275L016 TE Connectiv... 2.0 $ 1000 55A CABLE/SINGLE WALLCond...
MT29F1G01ABAFDSF-AAT:F TR Micron Techn... 3.37 $ 1000 IC FLASH 1G SPI 16SOPFLAS...
MT29F1G08ABAFAH4-ITE:F TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 63VF...
MT29F1G08ABAEAWP-IT:E TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 48TS...
MT29F8G08ABACAWP-IT:C TR Micron Techn... 0.0 $ 1000 IC FLASH 8G PARALLEL 48TS...
MT29F4G08ABAEAWP:E TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G08ABADAWP:D TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F8G16ABBCAH4:C TR Micron Techn... 0.0 $ 1000 IC FLASH 8G PARALLEL 63VF...
MT29F32G08CBADAWP:D TR Micron Techn... 0.0 $ 1000 IC FLASH 32G PARALLEL 48T...
MT29F64G08CFACAWP:C TR Micron Techn... 0.0 $ 1000 IC FLASH 64G PARALLEL 48T...
MT29F1G08ABBFAH4-ITE:F TR Micron Techn... 0.0 $ 1000 IC FLASH 1G PARALLEL 63VF...
MT29F2G01ABAGDSF-IT:G TR Micron Techn... 0.0 $ 1000 IC FLASH 2G SPI 16SOPFLAS...
MT29F2G08ABAEAH4-IT:E Micron Techn... -- 3476 IC FLASH 2G PARALLEL 63VF...
44B5121-20-MT29C1401-L302 TE Connectiv... 1.11 $ 1000 44B5121-20-MT29C1401-L302
44B5121-12-MT29C1401-L302 TE Connectiv... 2.35 $ 1000 44B5121-12-MT29C1401-L302
44B5121-16-MT29C1401-L302 TE Connectiv... 2.14 $ 1000 44B5121-16-MT29C1401-L302
MT29F1G08ABAEAH4:E TR Micron Techn... 1.91 $ 1000 IC FLASH 1G PARALLEL 63VF...
MT29F2G08ABAEAH4:E TR Micron Techn... 3.17 $ 5000 IC FLASH 2G PARALLEL 63VF...
MT29F4G08ABAEAWP-IT:E TR Micron Techn... 3.88 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F64G08AFAAAWP-ITZ:A TR Micron Techn... 40.25 $ 1000 IC FLASH 64G PARALLEL 48T...
EPD5955-22-MT29C1693L016 TE Connectiv... 1.09 $ 1000 55A CABLE/SINGLE WALLCond...
MT29F2G08AADWP:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
MT29F2G08AADWP-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
MT29F2G08ABDHC:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F2G08ABDHC-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F2G16AADWP:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
MT29F2G16AADWP-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 48TS...
MT29F2G16ABDHC:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F2G16ABDHC-ET:D TR Micron Techn... 0.0 $ 1000 IC FLASH 2G PARALLEL 63VF...
MT29F4G08AACWC:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G08AACWC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G08ABCHC:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 63VF...
MT29F4G08ABCHC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 63VF...
MT29F4G08ABCWC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G16AACWC:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G16AACWC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 48TS...
MT29F4G16ABCHC:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 63VF...
MT29F4G16ABCHC-ET:C TR Micron Techn... 0.0 $ 1000 IC FLASH 4G PARALLEL 63VF...
MT29F8G08AAAWP:A TR Micron Techn... 0.0 $ 1000 IC FLASH 8G PARALLEL 48TS...
MT29F16G08MAAWP:A TR Micron Techn... 0.0 $ 1000 IC FLASH 16G PARALLEL 48T...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics