MT29F1HT08ELHBBG1-3R:B TR Allicdata Electronics
Allicdata Part #:

MT29F1HT08ELHBBG1-3R:BTR-ND

Manufacturer Part#:

MT29F1HT08ELHBBG1-3R:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1.5T PARALLEL 333MHZ
More Detail: FLASH - NAND Memory IC 1.5Tb (192G x 8) Parallel 3...
DataSheet: MT29F1HT08ELHBBG1-3R:B TR datasheetMT29F1HT08ELHBBG1-3R:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1.5Tb (192G x 8)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important component of computer hardware. There are a variety of memories with different capacities, and today I would like to discuss the specific product MT29F1HT08ELHBBG1-3R:B TR. Specifically, I will discuss its application field and working principle.

MT29F1HT08ELHBBG1-3R:B TR is a kind of NAND Flash memory with a large capacity and relatively low cost. First of all, its application field can be divided into two types. One is consumer electronics, such as MP3 players, digital cameras, PDAs and mobile phones. The other is enterprise systems, such as servers, embedded storage configurations and telecom systems.

MT29F1HT08ELHBBG1-3R:B TR is a reliable storage device due to its stable performance. For instance, it produces less EMI noise than other kinds of memory. Its strong ECC also guarantees data integrity, which is its biggest advantage over other kinds of memory. So it is a very suitable option for large scale confidential file storage.

The working principle of MT29F1HT08ELHBBG1-3R:B TR is generally based on the fact that the data is stored in grid form. The reference voltage is generated from the top of each cell. The value of the reference voltage depends on the cell\'s resistance and the data stored inside. When the data needs to be written to the memory, a series of electrical pulses passes through the memory, raising or lowering the cell\'s reference voltage to change the stored value.

In the read process, an electrical pulse that differentiates the data in each cell is sent to the memory. The memory will then generate a special output pattern depending on the stored value. The output pattern is then sent to the controller, which will process it depending on the instructions given by the user.

MT29F1HT08ELHBBG1-3R:B TR is an attractive form of memory due to its features and attributes. It has a large capacity, is relatively low cost and produces less EMI noise compared to other memories. Also, its strong ECC ensures the data integrity and it is very suitable for large scale confidential file storage. Furthermore, its working principle can be concluded as the data being stored in grid form and two processes of electrical pulses raising or lowering the cell voltage to write or read the data.

The specific data is subject to PDF, and the above content is for reference

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