MT29F1G08ABBDAH4-ITX:D TR Allicdata Electronics
Allicdata Part #:

MT29F1G08ABBDAH4-ITX:DTR-ND

Manufacturer Part#:

MT29F1G08ABBDAH4-ITX:D TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6...
DataSheet: MT29F1G08ABBDAH4-ITX:D TR datasheetMT29F1G08ABBDAH4-ITX:D TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)
Base Part Number: MT29F1G08
Description

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The MT29F1G08ABBDAH4-ITX:D TR is a NAND Flash memory device specially designed for use with mobile phones, digital video cameras, and other applications that require a small footprint and excellent performance. Featuring a low pin count, the MT29F1G08ABBDAH4-ITX:D TR is an easy-to-use, cost-effective solution for storing data on mobile devices. It boasts fast random read and write cycles, which can greatly reduce the time that it takes to copy and store large amounts of data.

The MT29F1G08ABBDAH4-ITX:D TR has a 8GB storage capacity and works with 1.8V and 3.3V power supply levels. This device features eight advanced 32GB, 64GB, and 128GB Bit ECC blocks that are designed to detect and correct single-bit and multi-bit errors, making it an ideal choice for mission-critical applications. The small 3x3mm Footprint JEDEC 84-Ball BGA package and a package height of 0.5mm provide an ideal solution for embedded applications that require a small footprint for the device.

The advanced memory array architecture of the MT29F1G08ABBDAH4-ITX:D TR allows it to provide power-efficient operation and reliability. It also provides advanced manageability capabilities, including options for wear-leveling, bad block management, and hardware ECC. The wear-leveling feature levels out the writes to the memory array, thus increasing the overall lifetime of the device, while the bad block management feature takes care of any blocks that become unusable due to programming or erase errors. The hardware ECC ensures data integrity and helps to protect against data corruption.

The MT29F1G08ABBDAH4-ITX:D TR uses a multiple I/O width design, allowing it to read, program, and erase data on multiple bus widths including x8, x16, and x32. This device also provides flexible programming and security features, such as on-die hard and soft ECC, read/write protection, and password lock feature. Furthermore, the device supports PageCopy and BlockCopy commands, allowing for efficient programming and data backup.

In addition, the MT29F1G08ABBDAH4-ITX:D TR comes with standard die-level and system-level features, such as on-die temperature sensors, built-in self-test functions, and on-board diagnostics features. The device also supports multiple flash commands, enabling optimized firmware programming and fast execution of operations.

The MT29F1G08ABBDAH4-ITX:D TR is a cutting-edge memory device designed to enable high-performance storage and data protection features in mobile phone, digital video cameras, and other embedded applications. It provides fast random read and write cycles, a small form factor, and advanced manageability features. The NAND Flash device is an excellent choice for mission-critical applications that require reliable and robust data storage.

The specific data is subject to PDF, and the above content is for reference

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