MT29F32G08ABEDBM83C3WC1

Memory: MT29F32G08ABEDBM83C3WC1 Application Field and Working Principle

MT29F32G08ABEDBM83C3WC1 is a high performance, low power, Enterprise Flash memory offered by Micron Technologies. This memory is a high-density, MLC NAND memory which has an interface of 34nm × 8. It has a working voltage of 1.8 V, a frequency of 95 MHz, and an operating temperature range of 0 to 85 degrees Celsius. The main features of MT29F32G08ABEDBM83C3WC1 include high read performance, low power consumption, high reliability and wide operating temperature.

Application Field

MT29F32G08ABEDBM83C3WC1 is widely used in a variety of applications, such as industrial applications, mobile computing and consumer electronics. For industrial application, it is used in programmable logic controllers, RFID and barcode scanners. In mobile computing, it is used in cameras, smartphones, tablets and notebooks. In consumer electronic applications, it is used in digital TVs, DVD players, gaming hardware and other consumer electronic devices.

Working Principle

MT29F32G08ABEDBM83C3WC1 uses multi-level cell (MLC) NAND technology, which stores more than one bit of data in one cell. This leads to a higher areal density, better performance and lower cost than single-level cell (SLC) NAND technology. The memory is organized into 4 bytes per block and 32 blocks per page, providing an 8-bit interface. Each page includes an 8-byte spare area for each block, and the block size is 8192 bytes.

MLC NAND also offers superior write performance, allowing for faster programming time than SLC Flash. This NAND memory also offers a wide range of features, such as advanced wear-leveling, ECC, and Virtual Block Interleaving. MT29F32G08ABEDBM83C3WC1 has a data retention time of 20 years and a program erase cycle of 3000 cycles.

Conclusion

MT29F32G08ABEDBM83C3WC1 is a high performance, low power, MLC NAND memory, which offers superior performance and reliability compared to SLC NAND technology. It is widely used in industrial, mobile computing and consumer electronic applications. The advanced features of this memory such as wear-leveling, ECC and Virtual Block Interleaving make it suitable for mission-critical applications.