MT29F256G08AUAAAC5-ITZ:A TR

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Memory: MT29F256G08AUAAAC5-ITZ

MT29F256G08AUAAAC5-ITZ is a type of memory devices developed by Micron Technology. It is a 256-gigabit (32 Gigabyte) NAND Flash memory device configured as 2Gb x 8 bit (x16) or 4Gb x 4 bit (x8), providing storage capacity of 32 gigabytes. It is an advanced memory device with high read/write speed and low power consumption. The device uses advanced multibase NAND technology for higher performance, reliability and endurance. Moreover, it features advanced features such as multiplane write architecture to provide higher throughput, faster erase and programming, and more reliable data storage.

Features and Benefits

MT29F256G08AUAAAC5-ITZ offers several features and benefits that make it desirable for use in a variety of applications. It has a high read/write speed and low power consumption, making it suitable for use in fast-changing, power-conscious applications. The device\'s advanced multibase NAND technology allows it to be one of the most reliable and endurance-focused NAND Flash memory devices available. It also has the ability to use advanced features such as multiplane write architecture, which enables higher throughput and faster erase and programming times.

Application Fields

MT29F256G08AUAAAC5-ITZ is ideal for use in a variety of application fields. It is commonly used in applications such as digital video and audio recording, as well as for industrial and commercial automation and control systems. It is also suitable for use in numerous consumer applications, from digital cameras and camcorders to MP3 players, hand-held computers, and portable gaming devices. Furthermore, the device is often used in embedded systems, such as automotive, medical and communications applications. In addition, it can be used in data management systems, military and aerospace applications, and wireless communication systems.

Working Principle

The working principle of the MT29F256G08AUAAAC5-ITZ is based on the NAND Flash memory architecture. The device features a multilayer NAND Flash cell structure, which enables it to store multiple pages of data simultaneously in each memory cell. It also supports advanced features such as multiplane write architecture, which allows for higher write speeds and faster erasing and programming times. The device also features a low-voltage write architecture, enabling it to operate on low power and achieve superior read/write speeds. Finally, the device also features advanced error correction and low-latency access, further enabling higher performance and improved reliability.

Conclusion

MT29F256G08AUAAAC5-ITZ is a high-performance, low-power NAND Flash memory device. It is suitable for use in a variety of application fields, including digital video and audio recording, industrial and commercial automation and control systems, and embedded systems. The device’s advanced features, such as its multibase NAND technology and multiplane write architecture, help to improve read/write performance and provide reliability and endurance. The device’s working principle is based on a multilayer NAND Flash cell structure and features advanced features such as error correction, low-voltage write architecture, and low-latency access.

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