MT29F2G16ABDHC:D TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	2Gb (128M x 16)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.95 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-VFBGA
Base Part Number:	MT29F2G16

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MT29F2G16 ABDHC:D TR Memory

Introduction

The MT29F2G16ABDHC:DTR is a 32GB (2 x 16GB) Multicell NAND Flash Memory designed to meet the evolving needs of next-generation consumer products and high end enterprise applications. The MT29F2G16ABDHC:DTR utilizes an interface designed with host functionality and commands to simplify communication between the host system and the NAND Flash, using advanced redundancy and ECC features to ensure high data integrity.

Application Field

The MT29F2G16ABDHC:DTR is ideal for applications such as consumer electronics, digital media/vide/audio, mobile devices, set-top box, storage devices, media players, cameras and consumer applications. With its high storage capacity, the MT29F2G16ABDHC:DTR is ideal for applications that require a lot of storage, such as high-definition video, high-resolution photos and large audio files.

Working Principle

The MT29F2G16ABDHC:DTR utilizes NAND Flash technology, which means that the data stored in the device is written and read in “blocks.” Each block contains a number of pages. The NAND Flash technology used in the MT29F2G16ABDHC:DTR enables high performance, large capacity and low cost.The NAND Flash memory technology works by organizing the memory cells into blocks with a fixed number of words. The NAND Flash memory block contains a complete set of all the words in the memory. The NAND Flash memory is divided into multiple planes, which are further divided into blocks. Each block is further subdivided into pages.When writing on the NAND Flash memory, the host first determines the physical location of the target cell, and then writes the data or a descriptor (which is a 16-bit word) to the register. This is then followed by a write command. When the write command is executed, it will program the data onto the cells and the corresponding descriptor into the memory.When data is read from the NAND Flash memory, the device will first read the descriptor, followed by the data. This data is then passed back to the host.The MT29F2G16ABDHC:DTR offers a number of features, such as bad block management, static data refresh, advanced multi-plane programming and data recovery, to ensure data integrity and reliability.

Conclusion

The MT29F2G16ABDHC:DTR is a 32GB (2 x 16GB) Multicell NAND Flash Memory designed for next-generation consumer products and high end enterprise applications. It utilizes an interface designed with host functionality and commands to simplify communication between the host system and the NAND Flash, and offers a number of features to ensure data integrity and reliability. It is well-suited for applications that require a large storage capacity, such as high-definition video and high-resolution photos.

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