MT29F128G08AJAAAWP-IT:A Allicdata Electronics
Allicdata Part #:

MT29F128G08AJAAAWP-IT:A-ND

Manufacturer Part#:

MT29F128G08AJAAAWP-IT:A

Price: $ 95.22
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128G PARALLEL 48TSOP IFLASH - NAND Memory...
More Detail: N/A
DataSheet: MT29F128G08AJAAAWP-IT:A datasheetMT29F128G08AJAAAWP-IT:A Datasheet/PDF
Quantity: 20
1 +: $ 95.22000
10 +: $ 92.36340
100 +: $ 90.45900
1000 +: $ 88.55460
10000 +: $ 85.69800
Stock 20Can Ship Immediately
$ 95.22
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Clock Frequency: --
Write Cycle Time - Word, Page: --
Access Time: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Base Part Number: MT29F128G08
Description

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The MT29F128G08AJAAAWP-IT microscopic memory is one of the advanced memory technologies designed with ultra-high stability and capacity. It is part of the Micron NAND Flash series, and is great for building advanced embedded system designs. This technology is a non-volatile memory, and the NAND Flash architecture is incredibly powerful, allowing high-storage capacity and scalability in a minimal footprint.

The MT29F128G08AJAAAWP-IT is based on a 3-level cell (TLC) NAND Flash memory, with each memory cell storing more than one bit of data. This makes it ideal for data that is written and rewritten frequently, such as audio and video files. The memory is also well suited for applications that require high endurance such as industrial, automotive, and medical devices.

It is designed to provide an array of 128 Mx 16 NAND Flash die with a stacked memory configuration. The configuration provides extra bandwidth and shorter signal paths for read/write operations. The array is based on a 70nm 3D NAND Flash process, with a total NAND Flash die size of 39.6mm2.

The MT29F128G08AJAAAWP-IT has many innovative features, including an improved Command Address Latency (CAL) and a “lean mode” that reduces power consumption. It also has additional features such as an optimized performance, a standard interface and unique debugging tools. The memory can be used in various embedded systems and applications, including mobile phones, automotive, medical and industrial systems, and it is also compatible with the most popular device architectures.

The MT29F128G08AJAAAWP-IT is based on the ECC operation, which is used to provide a method of error correction. This ECC method is extremely efficient and helps improve performance, in addition to ensuring reliable data integrity. With this technology, all data is checked for accuracy using 8-bit or 64-bit ECC codes before it is written or retrieved.

The other important feature of this memory is its robust NAND flash interface. This interface allows any number of programmed operations such as read, write, and erase operations, making it easy for the user to communicate with the device. The interface can also be used to monitor and control the voltage and current levels in the memory.

The MT29F128G08AJAAAWP-IT also offers low power consumption and an improved thermal management system. The device has a low voltage range of 0.3 to 1.8V, which helps reduce power consumption while allowing faster memory access. The unique thermal management system helps prevent overheating, prolonging the life of the device and ensuring data integrity.

In short, the MT29F128G08AJAAAWP-IT is a great option for any embedded system. It is reliable, has high storage capacity and scalability, and provides robust performance. With its intuitive interface and low power consumption, it is perfect for various embedded applications and can be used in various industrial, automotive, and medical devices.

The specific data is subject to PDF, and the above content is for reference

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