MT29F128G08AMCABK3-10:A TR

Memory – MT29F128G08AMCABK3-10:A TR

Memory is a critical aspect of digital electronics and play a vital role in the operation of digital systems. A typical example of a memory technology is the MT29F128G08AMCABK3-10:A TR. The device is a multi-level cell (MLC) flash memory, which is a type of non-volatile memory (NVM) that stores data using electrical charge instead of magnetic domains.

Application Field

The MT29F128G08AMCABK3-10:A TR can be used in a wide variety of applications, including embedded systems, consumer electronics, industrial systems, and medical devices. It is typically used in situations where low power consumption, fast read speeds, and high densities are needed. The device is very reliable and is suitable for high-volume production.

One of the most common applications for the MT29F128G08AMCABK3-10:A TR is in embedded systems. This type of memory is typically used in devices that require fast loading times and data retrieval speeds. Examples of embedded systems include smart phones, point of sale (POS) terminals, industrial control systems, and automotive systems. The MT29F128G08AMCABK3-10:A TR also provides security advantages in that it can be programmed to resist tampering and bypass attempts.

Working Principol

The MT29F128G08AMCABK3-10:A TR is a multi-level cell (MLC) flash memory, which is a type of non-volatile memory (NVM) that stores data using electrical charge instead of magnetic domains. It is organized as a grid of transistors, with each cell capable of storing two charges, thus providing four different levels of data. This allows for higher capacities in the same area and lower power consumption, making it ideal for embedded applications.

The device operates with a voltage range of 2.7V to 3.6V and a maximum read frequency of 133MHz. It is capable of erasing whole blocks of 4K bytes and writing data in 64-byte chunks. The device also has on-chip Error Correction Code (ECC) for reliable data transmission. Other features of the device include burst read and write, 1-bit and 8-bit ECC, and fast-boot capability. The device supports multiple operating temperatures.

MT29F128G08AMCABK3-10:A TR is built using a 3D NAND flash technology, which provides higher densities and lower costs than traditional 2D flash. The design allows for up to four bits of data to be stored per cell, which in turn increases the capacity of the device. This makes it ideal for applications requiring higher densities and higher performance. As a result, this memory technology is increasingly being used for embedded systems, consumer electronics and industrial applications.

Conclusion

The MT29F128G08AMCABK3-10:A TR is a multi-level cell (MLC) flash memory device that is ideal for a wide variety of applications including embedded systems, consumer electronics, industrial systems, and medical devices. The device offers low power consumption, high densities, fast read and write speeds, and enhanced security features. Its use of 3D NAND technology allows it to provide increased densities and enhanced performance, making it an ideal solution for modern embedded systems.