MT29F128G08AMEDBJ5-12:D TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT29F128G08AMEDBJ5-12:D TR is a high-performance memory module with a variety of applications. This type of memory is often used in portable electronics and computers to provide more storage capacity and faster data transfer rates than traditional memory solutions. As such, it is an important component of any modern system.

The MT29F128G08AMEDBJ5-12:D TR memory module utilizes the latest NAND flash technology to optimize performance. It uses a 2-plane architecture and 16mb page size to provide an effective storage solution. This module can provide 64Gb of storage and has a write endurance of 400mb per second. The MT29F128G08AMEDBJ5-12:D TR also features an error correction code, which reduces the chances of data loss.

This type of memory is mainly used in portable devices, such as mobile phones, digital cameras, and tablets. It is also suitable for embedded applications, such as automotive systems and set-top boxes. The MT29F128G08AMEDBJ5-12:D TR memory module is designed to be very reliable, even in extreme environmental conditions, and is capable of operating at a temperature range of -40 to +85 degrees Celsius.

The working principle of the MT29F128G08AMEDBJ5-12:D TR memory module is based on NAND flash technology. NAND flash technology is the most popular storage solution and offers greater read/write speeds than traditional memory modules. It consists of an array of memory cells which can be programmed or no changed according to the user’s requirements. Each cell engages in a process, known as programming, to store data. The process of programming involves writing a binary pattern in the memory cell, which can then be read back as a bit. This process is repeated for each cell, hence making the memory module a source of volatile storage.

The MT29F128G08AMEDBJ5-12:D TR memory module also includes special algorithms for error correction. These algorithms perform an additional read cycle to make sure that the data stored in each memory cell is the same as what was originally programmed. If there is an error detected during this process, the module will re-write the data in order to correct it. This process helps to reduce the chances of data corruption and increases the reliability of the memory module.

Overall, the MT29F128G08AMEDBJ5-12:D TR is a reliable and high-performance memory module that can be used in a variety of applications. It uses the latest NAND flash technology to provide superior read/write speeds and error correction algorithms to ensure accuracy. This type of memory is well suited for portable electronic devices, embedded applications, and any other system requiring fast storage and reliable performance.

The specific data is subject to PDF, and the above content is for reference