| Allicdata Part #: | MT29F128G08AMEDBJ5-12:D-ND |
| Manufacturer Part#: |
MT29F128G08AMEDBJ5-12:D |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 128G PARALLEL 83MHZ |
| More Detail: | FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 83... |
| DataSheet: | MT29F128G08AMEDBJ5-12:D Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 128Gb (16G x 8) |
| Clock Frequency: | 83MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT29F128G08AMEDBJ5-12:D is a high-density, low-cost, small-outline 4Gb NAND Flash memory. It is a small, robust storage option designed for industrial and consumer electronics applications. This article will discuss the applications of the memory and its working principle.
The MT29F128G08AMEDBJ5-12:D is suitable for a wide range of applications. It is a cost-effective solution for handhelds and consumer electronics such as MP3 players, digital cameras, and PDAs. For industrial applications, it is an ideal choice for data storage in storage and instrumentation systems. It is also used for applications such as high-security data storage, data logging, and firmware upgrades.
The memory is designed with a high-density structure that enables it to store up to 4Gb of data in a small outline (7mm x 11mm) package. It has a multi-level cell (MLC) structure, which provides reliable, high-speed performance and efficient data storage. The memory also has a wide operating temperature range, making it suitable for a variety of temperatures.
The working principle of the MT29F128G08AMEDBJ5-12:D is based on NAND Flash architecture. It uses a two-gate structure to store data in cells. These cells are arranged in blocks which can consist of up to 4096 cells. Each cell can store either a "1" or "0" in a single bit.
The MT29F128G08AMEDBJ5-12:D uses a four-bit architecture in order to read, write, and erase data. This architecture divides the memory into four distinct blocks that are used separately for writing and erasing. This ensures that the data is stored reliably and without any errors. During the read operation, the four blocks are used in parallel to read the data in the cells.
The memory supports several memory operations such as erased, write, and read. It also supports a range of error correction codes (ECC) to ensure data integrity. The memory also has a robust wear-leveling algorithm that distributes data between physical blocks over time, ensuring that no particular block is overused.
The MT29F128G08AMEDBJ5-12:D is a robust, high-density memory solution that is suitable for a variety of industrial and consumer applications. Its efficient design and wide operating temperature range make it an ideal choice for data storage. It uses a four-bit architecture in order to read, write, and erase data, and it has a wide range of error correction codes to ensure data integrity.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT29F1G16ABCHC-ET:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29C1G12MAACAEAKC-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 107... |
| MT29F4G08ABADAWP-ITX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29F1G08ABBDAH4:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F1G08ABBDAH4-ITX:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F256G08AUAAAC5-Z:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 52... |
| MT29F512G08CMCABH7-6R:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 15... |
| MT29F64G08CFACBWP-12Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 48T... |
| MT29F1T08CPCCBH8-6R:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
| MT29F1T08CUCCBH8-6R:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 167M... |
| MT29F256G08AMCBBH7-6IT:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 16... |
| MT29F2T08CTCCBJ7-6R:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2T PARALLEL 167M... |
| MT29F256G08EBHAFB16A3WTA | Micron Techn... | 0.0 $ | 1000 | TLC 256G DIE 32GX8Memory ... |
| MT29F256G08EBCAGJ4-5M:A TR | Micron Techn... | 0.0 $ | 1000 | TLC 256G 32GX8 VBGAMemory... |
| MT29F1G16ABBEAH4:E TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29KZZZ6D4AGLDM-5 W.6N4 TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 38G MLC DDRMemor... |
| MT29F16G08ABCCBH1-10Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16G PARALLEL 100... |
| MT29F64G08CECCBH1-12Z:C | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64G PARALLEL 100... |
| MT29F512G08CMEABH7-12:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 83... |
| MT29E6T08ETHBBM5-3ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 6T PARALLEL 333M... |
| MT29F128G08EBEBBWP:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 48... |
| MT29F4G16ABAFAH4-AITES:F | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL FBGA... |
| MT29F4G08AACWC-ET:C TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 48TS... |
| MT29C1G12MAACAEAML-6 IT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 1G PARAL 153... |
| MT29F1G16ABBDAH4-ITX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1G PARALLEL 63VF... |
| MT29F32G08ABAAAWP-ITZ:A TR | Micron Techn... | 29.55 $ | 480 | IC FLASH 32G PARALLEL 48T... |
| MT29F4G08ABADAH4-IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29F1T08CUEABH8-12:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1T PARALLEL 83MH... |
| MT29C1G12MAAJVAKC-5 IT TR | Micron Techn... | 0.0 $ | 1000 | MCP 64MX16/32MX16 PLASTIC... |
| MT29F128G08CECDBJ4-6R:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 16... |
| MT29F128G08EBCDBJ4-5M:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128G PARALLEL 20... |
| MT29F1HT08ELHBBG1-3R:B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 1.5T PARALLEL 33... |
| MT29F4G08ABADAH4-AATX:D | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL FBGA... |
| MT29F512G08CECBBJ4-37:B | Micron Techn... | 0.0 $ | 1000 | IC FLASH 512G PARALLEL 26... |
| MT29F32G08ABEDBM83C3WC1 | Micron Techn... | 0.0 $ | 1000 | SLC 32G DIE 4GX8Memory IC |
| MT29C8G96MAAFBACKD-5 WT | Micron Techn... | 0.0 $ | 1000 | IC FLASH RAM 8G PARALLEL ... |
| MT29F4G16ABADAH4-AIT:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4G PARALLEL 63VF... |
| MT29F2G16ABDHC:D TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 2G PARALLEL 63VF... |
| MT29F256G08CMCABH2-12:A | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 10... |
| MT29F256G08AUAAAC5-ITZ:A TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256G PARALLEL 52... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
MT29F128G08AMEDBJ5-12:D Datasheet/PDF