MT29F128G08AMEDBJ5-12:D Allicdata Electronics
Allicdata Part #:

MT29F128G08AMEDBJ5-12:D-ND

Manufacturer Part#:

MT29F128G08AMEDBJ5-12:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128G PARALLEL 83MHZ
More Detail: FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 83...
DataSheet: MT29F128G08AMEDBJ5-12:D datasheetMT29F128G08AMEDBJ5-12:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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The MT29F128G08AMEDBJ5-12:D is a high-density, low-cost, small-outline 4Gb NAND Flash memory. It is a small, robust storage option designed for industrial and consumer electronics applications. This article will discuss the applications of the memory and its working principle.

The MT29F128G08AMEDBJ5-12:D is suitable for a wide range of applications. It is a cost-effective solution for handhelds and consumer electronics such as MP3 players, digital cameras, and PDAs. For industrial applications, it is an ideal choice for data storage in storage and instrumentation systems. It is also used for applications such as high-security data storage, data logging, and firmware upgrades.

The memory is designed with a high-density structure that enables it to store up to 4Gb of data in a small outline (7mm x 11mm) package. It has a multi-level cell (MLC) structure, which provides reliable, high-speed performance and efficient data storage. The memory also has a wide operating temperature range, making it suitable for a variety of temperatures.

The working principle of the MT29F128G08AMEDBJ5-12:D is based on NAND Flash architecture. It uses a two-gate structure to store data in cells. These cells are arranged in blocks which can consist of up to 4096 cells. Each cell can store either a "1" or "0" in a single bit.

The MT29F128G08AMEDBJ5-12:D uses a four-bit architecture in order to read, write, and erase data. This architecture divides the memory into four distinct blocks that are used separately for writing and erasing. This ensures that the data is stored reliably and without any errors. During the read operation, the four blocks are used in parallel to read the data in the cells.

The memory supports several memory operations such as erased, write, and read. It also supports a range of error correction codes (ECC) to ensure data integrity. The memory also has a robust wear-leveling algorithm that distributes data between physical blocks over time, ensuring that no particular block is overused.

The MT29F128G08AMEDBJ5-12:D is a robust, high-density memory solution that is suitable for a variety of industrial and consumer applications. Its efficient design and wide operating temperature range make it an ideal choice for data storage. It uses a four-bit architecture in order to read, write, and erase data, and it has a wide range of error correction codes to ensure data integrity.

The specific data is subject to PDF, and the above content is for reference

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