MT29F128G08CECBBH1-10:B Allicdata Electronics
Allicdata Part #:

MT29F128G08CECBBH1-10:B-ND

Manufacturer Part#:

MT29F128G08CECBBH1-10:B

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128G PARALLEL 100VBGA
More Detail: FLASH - NAND Memory IC 128Gb (16G x 8) Parallel 10...
DataSheet: MT29F128G08CECBBH1-10:B datasheetMT29F128G08CECBBH1-10:B Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-VBGA
Supplier Device Package: 100-VBGA (12x18)
Description

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Memory technology has advanced massively in recent years and one of the most popular models available on the market today is the MT29F128G08CECBBH1-10:B. This is a type of flash NAND that offers reliable storage for data. It is the latest advancement in memory technology and has become highly sought after for its performance and power.The MT29F128G08CECBBH1-10:B is a 128-gigabyte version of the flash NAND architecture, designed by Micron. It is a high-performance memory device that delivers superior reliability and read/write speeds. This makes it perfect for data-intensive applications such as large-scale databases and intensive video streaming.The MT29F128G08CECBBH1-10:B is an ideal solution for an array of applications such as digital media storage, laptop and desktop computers, embedded systems and intelligent network systems. The device is designed to reduce power consumption as it operates at a much lower power than traditional memory architectures. This results in a longer battery life and less heat dissipation, both of which are hugely beneficial when using the device in a laptop or desktop PC.The MT29F128G08CECBBH1-10:B works by utilizing a floating NOR gate pinout, which enables the device to access multiple cells simultaneously. This allows the device to read and write data faster and more efficiently than other NANDs. For example, the MT29F128G08CECBBH1-10:B can read up to 40MB per second and write up to 20MB per second — far exceeding other NAND devices.In addition, the MT29F128G08CECBBH1-10:B offers advanced error correction, enhanced global wear leveling and an array of storage solutions. This includes 64KB block sizes for large files and capacity for up to three years worth of data retention. Furthermore, the device offers access speeds that can reach speeds of up to 650ns, allowing for faster data transfers.The MT29F128G08CECBBH1-10:B is an excellent storage solution for many applications. Its advanced features make it perfectly suited for a multitude of scenarios. This includes data-intensive applications such as large databases and video streaming. Its reliable performance and power also make it an ideal choice for embedded systems and intelligent network systems.Overall, the MT29F128G08CECBBH1-10:B is an excellent example of the latest advancements in memory technology. The device offers superior reliability, read/write speeds and power consumption, making it ideal for an array of applications. It is a highly sought-after device that is well-suited to many scenarios, making it a great choice for any application that requires fast and reliable data storage.

The specific data is subject to PDF, and the above content is for reference

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