MT29F128G08CECGBJ4-5M:G Allicdata Electronics
Allicdata Part #:

MT29F128G08CECGBJ4-5M:G-ND

Manufacturer Part#:

MT29F128G08CECGBJ4-5M:G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128G PARALLEL 132VBGA
More Detail: FLASH - NAND Memory IC 128Gb (16G x 8) Parallel
DataSheet: MT29F128G08CECGBJ4-5M:G datasheetMT29F128G08CECGBJ4-5M:G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Description

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MT29F128G08CECGBJ4-5M is a type of memory, which is a component that stores data or programs inside a computer. It is used to store information temporarily in order to store data, store programs, and allow the computer to access that data more quickly. Memory can be divided into different categories, such as RAM (Random Access Memory), ROM (Read-Only Memory), cache memory, and flash memory. The MT29F128G08CECGBJ4-5M is a type of flash memory that is designed to store large amounts of non-volatile information in a small space. This type of memory is typically used in a range of applications to store data and programs.

Flash memory is a type of non-volatile semiconductor memory that stores data even when the power is turned off. It is used for varying applications ranging from simple storage to complex data storage and code execution. Flash memory can also be used in data-critical applications, as it is faster than traditional media such as hard drives. Flash memory is increasingly being used in many markets and applications, including mobile phones, handheld-music players, and digital cameras.

The MT29F128G08CECGBJ4-5M is a multi-level cell flash memory that provides high density and compact form factor. It is organized in 8-bit words, which supports 8-bit and 16-bit data paths. The memory provides a high endurance of up to 10,000 program/erase cycles. The read speed can reach up to 100MB/s with peak current of 200mA. It is used mainly to store data or programs and is typically found in consumer electronics, storage devices, and memory cards.

The working principle of flash memory is based on the floating gate transistors that are used to store data. It is composed of two stacked transistors: the control gate (CG) and the floating gate (FG). The data can be stored in the FG, which is electrically isolated from the substrate. To write data into the cell, a positive voltage is applied to the control gate, creating a tunneling effect between the FG and the CG. The electrons are then injected into the FG, and the data will remain there until the voltage is reversed and the electrons are removed.

The MT29F128G08CECGBJ4-5M is widely used in consumer electronics devices, storage devices and memory cards. It is used in digital cameras, mobile phones and handheld music players, as it provides a high endurance, fast read speed and a compact form factor. It is also used in data-critical applications, due to its high speed and non-volatility.

In conclusion, the MT29F128G08CECGBJ4-5M is a type of flash memory that provides a high density and compact form factor, making it suitable for many applications. It has a high endurance of up to 10,000 program/erase cycles and a read speed of up to 100MB/s, making it a suitable choice for data-critical applications. In addition, its working principle is based on the floating gate transistors, which allow electrons to be injected into the FG, providing a non-volatile storage option. The memory is widely used in consumer electronics, storage devices, memory cards, and more.

The specific data is subject to PDF, and the above content is for reference

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