MT29F128G08EBEBBWP:B

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MT29F128G08EBEBBWP: B is a memory device of the type known as NAND Flash. This type of memory is used in a wide range of applications such as digital cameras, smartphone memory cards, solid state drives (SSDs), and other similar devices. It provides secure storage of data without any moving parts and is suitable for applications that require fast read/write speeds.

NAND Flash memory works by storing data in “pages” of 128 bytes (1KByte) each. Data is written to and read from the memory in pages, usually in a continuous stream of data. Data can also be written to individual locations on the device, but this requires the entire page to be erased first. The page size can be changed by specifying an appropriate page size mask.

The MT29F128G08EBEBBWP:B features a 128 Gb (1G Byte) capacity and an advanced error correction feature to help ensure reliable read/write operations. It also has an additional 8 Gb (64 MByte) spare area that can be used to store spare data in case of errors occurring. The device has a Vcc (power supply voltage) range of 2.7 – 3.6V, making it compatible with a wide variety of applications.

In addition to its advanced error correction, the MT29F128G08EBEBBWP:B also has a number of security features. It supports Winbond’s “Security Programming Set” which allow users to customize the device\'s security settings. The device also supports AES-128 bit encryption and features an integrated cryptographic coprocessor for added security.

The MT29F128G08EBEBBWP:B is widely used in many common applications such as digital cameras, smartphones and USB flash drives. It is an extremely reliable memory device, making it ideal for applications requiring high data storage capacities and long-term reliability.

Thanks to its fast read/write speeds, excellent error correction, and versatile security features, the MT29F128G08EBEBBWP:B is an extremely popular memory device. It is used in a wide range of consumer electronic products and is a great choice for anyone who needs a reliable, secure and high-capacity memory solution.

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