
Allicdata Part #: | 557-1652-2-ND |
Manufacturer Part#: |
MT29F1G01ABAFD12-AAT:F TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1G SPI 24TBGA |
More Detail: | FLASH - NAND Memory IC 1Gb (1G x 1) SPI 24-TBGA ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 1Gb (1G x 1) |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-TBGA |
Supplier Device Package: | 24-TBGA (6x8) |
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The MT29F1G01ABAFD12-AAT:F TR memory is a type of non-volatile memory device that is useful for data storage and computation. It has a high density, low power consumption, and fast access times, making it a very popular and reliable choice for many applications.
What is MT29F1G01ABAFD12-AAT:F TR Memory?
MT29F1G01ABAFD12-AAT:F TR memory is a type of non-volatile memory (NVM) device. It uses a floating gate of silicon to store digital data, which it can access or write to and from very quickly. This type of memory is widely used in computers, smartphones, other gadgets and devices.
Applications of MT29F1G01ABAFD12-AAT:F TR Memory
MT29F1G01ABAFD12-AAT:F TR memory has many applications in a variety of fields, including aviation, aerospace, computing, electronics, and automotive. It can be used to store data such as images, graphics, video and audio. It is also popular in embedded systems and mobile computing, and is used in medical, automotive and avionics applications.
Working Principle of MT29F1G01ABAFD12-AAT:F TR Memory
The working principle of MT29F1G01ABAFD12-AAT:F TR memory is based on the floating gate technology. This device stores data in a silicon floating gate and allows data to hold states by changing the electrical charge of the floating gate. The single layer floating gate NVM consists of a thin layer of electrically programmed floating gate memory cell over a silicon substrate, with an oxide layer to provide insulation.
The device works by allowing an electrical charge to be placed onto the floating gate. This is then held in position by the oxide insulation layer. When data needs to be written to or read from the device, the charge is released, allowing the data to be changed or accessed.
Benefits of MT29F1G01ABAFD12-AAT:F TR Memory
MT29F1G01ABAFD12-AAT:F TR memory offers many advantages over other types of memory. It has a higher density than other types of NVM, which means it can store large amounts of data in a small area. MT29F1G01ABAFD12-AAT:F TR memory also offers a low power consumption, which can help make devices much more energy efficient. Finally, since the data is stored in a floating gate, access times are faster than with other memories, allowing for faster data retrieval.
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