MT29F1G08ABAEAH4-AITX:E TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory plays an important role in modern computing. From the early days of DRAM and SRAM, to the latest developments in solid-state drives (SSDs) and non-volatile memory, it has become a vital component of every computing system.

One such memory device is the MT29F1G08ABAEAH4-AITX:E TR. This is a multi-level cell, double-data rate synchronous dynamic random access memory (SDRAM), which combines the functionality of two memory devices in a single package. In this article, we will discuss the application fields and working principle of the MT29F1G08ABAEAH4-AITX:E TR.

Application Fields of MT29F1G08ABAEAH4-AITX:E TR

The MT29F1G08ABAEAH4-AITX:E TR is a great choice for a wide range of applications. It is commonly used in automotive systems, industrial controllers, medical devices, and other embedded systems that require high performance, low power consumption and reliable data storage. The low power consumption, wide temperature operating range, and fast write performance make it ideal for applications where battery life and data security are essential. It is also suitable for device applications such as surveillance cameras and e-books, which demand a long life cycle and low power consumption.

The device can also be used in digital signal processing, telecommunications, networking, and embedded systems applications. Due to its fast write performance and efficient error correction code (ECC), the device is suitable for data encryption and secure storage applications. Furthermore, the device is compliant with the Advanced Encryption Standard (AES), making it an excellent choice for encrypting sensitive data.

Working Principle of MT29F1G08ABAEAH4-AITX:E TR

The MT29F1G08ABAEAH4-AITX:E TR is a double-data rate synchronous dynamic random access memory (SDRAM), which is ideal for a range of applications that require high performance, low power consumption, and reliable data storage. It features bit cell structure with 8 bits per cell and an efficient error correction code (ECC) per 64-bit block. The device also offers AES encryption capabilities, making it an excellent choice for secure storage applications.

The device is organized as a 2-Mbit array of 1,024 columns and 512 rows, with each column containing 1,024 bits. The data is transferred to the device using a multiplexed address/data bus called CA0~CA11. To read data from the device, the address of the desired bit or byte is provided to the device via the address bus and the data is transferred to the system via the data bus. Similarly, to write data to the device, the address of the desired bit or byte is provided to the device via the address bus and the data is transferred from the system via the data bus. The device also supports burst data transfers, allowing for faster data transfers.

The MT29F1G08ABAEAH4-AITX:E TR is a reliable, high-performance memory device that is perfect for a wide range of applications. It features low power consumption, a wide temperature operating range, and fast write performance, making it an excellent choice for applications where battery life and data security are essential. The device also supports AES encryption, making it an ideal choice for secure storage applications.

The specific data is subject to PDF, and the above content is for reference