Series:	--
Packaging:	Bulk
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-VFBGA (9x11)
Base Part Number:	MT29F1G08

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MT29F1G08ABAEAH4:E Application Field and Working Principle

Introduction to Memory

Memory is an essential part of any computing system, regardless of its type, size, or application. It is the part of the system that holds the data necessary for system operation, including the program instructions, the data that is being processed, the system\'s current state, and the results of any previous operations. Memory can be divided into two different types: volatile memory, which is lost when power is turned off, and non-volatile memory, which can still be accessed after power is turned off.

MT29F1G08ABAEAH4:E Memory

The MT29F1G08ABAEAH4:E is a non-volatile memory device used in many consumer and industrial applications. It is a component of the SLC NAND Flash Memory family which is used in a wide variety of products. The device is capable of providing up to 8Gb (1GB) of single level cell (SLC) memory in a small 8x20mm form factor. The MT29F1G08ABAEAH4:E operates off of a single 3.3V power source, and features an industry-standard 8-bit multiplexed address/data bus interface.

Application Fields

The MT29F1G08ABAEAH4:E is a highly versatile memory device, used in a variety of applications. In consumer electronics, it is commonly used as the storage component of embedded systems, such as Smart TVs, satellite receivers, and set-top boxes. In automotive applications, it is used as the main component of various vital electronic control units (ECUs), such as the engine control unit and body control unit. In industrial applications, this memory device is often found in programmable logic controllers (PLCs), medical equipment, industrial control systems, and other equipment.

Working Principle

The working principle of the MT29F1G08ABAEAH4:E memory device is based on the concept of flash memory. It stores data within an array of transistors, known as a memory cell, which can store either a 1 or a 0. Data is written to or read from the cells via a series of electrical pulses. The MT29F1G08ABAEAH4:E is able to retain data even without a power source, thanks to the fact that it is a single level cell device. This means that each cell is capable of retaining one bit of data, making it more reliable than multi-level cell memory devices, which are more susceptible to errors.

Conclusion

The MT29F1G08ABAEAH4:E is a versatile and reliable non-volatile memory device which is used in a variety of consumer, automotive, and industrial applications. It works on the concept of flash memory, where electrical pulses are used to write and read data from an array of transistors. As a single level cell device, the MT29F1G08ABAEAH4:E is more reliable than multi-level cell devices, and has become an increasingly popular choice for many applications.

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