| Allicdata Part #: | MT29F1G08ABAEAH4-ITX:E-ND |
| Manufacturer Part#: |
MT29F1G08ABAEAH4-ITX:E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 1G PARALLEL 63VFBGA |
| More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6... |
| DataSheet: | MT29F1G08ABAEAH4-ITX:E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 1Gb (128M x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 63-VFBGA |
| Supplier Device Package: | 63-VFBGA (9x11) |
| Base Part Number: | MT29F1G08 |
Description
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MT29F1G08ABAEAH4-ITX:E Memory Application Field and Working Principle
MT29F1G08ABAEAH4-ITX:E memory is known for its fast read and write speeds, making it especially useful for applications requiring high speed data transfer. This type of memory is used for applications such as robotics, artificial intelligence, data acquisition, instrumentation, and embedded systems. It is also compatible with a wide range of processors and embedded systems, making it suitable for many different applications. In this article, we will take a look at the application field and working principle of MT29F1G08ABAEAH4-ITX:E memory.
MT29F1G08ABAEAH4-ITX:E memory is a type of Dynamic Random Access Memory (DRAM) and is used in many different applications. It is a high-speed memory module with a maximum transfer rate of up to 1.2 GBps. This memory module is composed of up to 4 banks of high-speed, high-density memory chips and is designed to provide rapid read and write access times. The module utilizes the SDRAM architecture and is capable of executing multiple commands simultaneously.
The main application field of MT29F1G08ABAEAH4-ITX:E memory is embedded systems. This includes handheld devices, automotive systems, and industrial control systems. In these applications, high speed access to data is essential. By utilizing MT29F1G08ABAEAH4-ITX:E memory, these embedded systems can access their data much faster, resulting in improved performance and efficiency. This type of memory is also used in scientific and medical applications, where fast and accurate data processing is essential.
The working principle of MT29F1G08ABAEAH4-ITX:E memory is based on a synchronous dynamic memory (SDR) architecture. This memory architecture works on a "burst" basis, with data being read or written in blocks of 8-beat cycles. This type of architecture is ideal for applications requiring rapid access to data and improved performance. The architecture also allows for the simultaneous execution of multiple commands and quicker access to memory contents.
Overall, MT29F1G08ABAEAH4-ITX:E is an ideal type of memory for embedded systems, robotics, instrumentation, and other applications where fast and accurate data processing is essential. Its fast read and write speeds make it suitable for a range of processors and embedded systems. The SDR architecture makes it optimal for applications requiring high speed data transfer and improved performance. As such, it is widely used in a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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MT29F1G08ABAEAH4-ITX:E Datasheet/PDF