| Allicdata Part #: | MT29F1G08ABBEAH4-IT:E-ND |
| Manufacturer Part#: |
MT29F1G08ABBEAH4-IT:E |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 1G PARALLEL 63VFBGA |
| More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6... |
| DataSheet: |  MT29F1G08ABBEAH4-IT:E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 1Gb (128M x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 63-VFBGA |
| Supplier Device Package: | 63-VFBGA (10.5x13) |
| Base Part Number: | MT29F1G08 |
Description
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Memory has become a critical part of many computing and storage applications. In this article, we will focus on the MT29F1G08ABBEAH4-IT:E memory, its application fields and working principles. The MT29F1G08ABBEAH4-IT:E is a 3.0V 8-Gigabit (1 Gigabit = 1 billion bytes) NAND flash memory that utilizes four-plane SLC technology with an on-chip ECC processor. It is designed to meet the growing demand for increased storage performance and higher data integrity at a cost-effective price.The MT29F1G08ABBEAH4-IT:E is mainly used in high-density digital storage applications such as digital TVs, set-top boxes, digital photo frames and industrial photography. It is also well suited for applications where low power consumption and small form factor are important such as small form factor laptops and handheld electronics. In terms of performance, the MT29F1G08ABBEAH4-IT:E has a peak read response time of 60ns, a write response time of 120ns and an erase response time of 120ns. It also features a 65-cycle maximum read latency, an average write latency of 90ns, and a maximum write latency of 120ns. This makes it an ideal choice for applications that require a high level of read/write throughput and low power consumption.The MT29F1G08ABBEAH4-IT:E is designed to provide both power efficiency and error correction. It leverages four-plane technology to reduce the voltage signal lines and improve power efficiency. By utilizing 16-bit error correction coding (ECC), the device is able to detect and correct errors in the data before it is written. This ensures that the data is always written correctly, providing a higher level of data integrity.The working principles of the MT29F1G08ABBEAH4-IT:E are based on a series of processes. The write process involves the read of data from the memory. This data is then decoded, corrected, and error corrected, before being written into the flash memory. The erase process begins with the writing of a command to the flash memory. Once the command is written, the flash memory is then erased and the generated erased bits are written back. Finally, the written data is read out of the memory and stored in the user\'s device.In conclusion, the MT29F1G08ABBEAH4-IT:E is a cost-effective and high-performance memory solution designed for use in high-density applications. It is well suited for applications that require low power consumption and a small form factor, as well as for applications that require a high level of data integrity. Thanks to its four-plane technology and on-chip ECC processor, the MT29F1G08ABBEAH4-IT:E is an ideal choice for applications that require high performance and low power consumption.The specific data is subject to PDF, and the above content is for reference
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