| Allicdata Part #: | MT29F1G08ABBEAHC-IT:ETR-ND |
| Manufacturer Part#: |
MT29F1G08ABBEAHC-IT:E TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 1G PARALLEL 63VFBGA |
| More Detail: | FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 6... |
| DataSheet: |  MT29F1G08ABBEAHC-IT:E TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 1Gb (128M x 8) |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 63-VFBGA |
| Supplier Device Package: | 63-VFBGA (10.5x13) |
| Base Part Number: | MT29F1G08 |
Description
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Memory serves as a powerful tool for information storage and processing in modern digital systems. It stores data, performs logic operations, records sequences of events and more. MT29F1G08ABBEAHC-IT:E TR is a high-density, high-performance, non-volatile memory, which has been widely applied to many fields. This article will introduce its application field and the working principle.First of all, let’s talk about its application field. MT29F1G08ABBEAHC-IT:E TR is applied to a large number of fields such as USB storage, industrial systems, and embedded application. In USB storage, it is used to supplement earlier NAND device programming or specific read/write performance. Compared with the traditional serial NAND flash, it can increase the data read and write speed, reduce the power consumption and improve the product design flexibility. In the industrial system, it is usually used for fault monitoring and input/output control. It can support robust real-time control functions and flexible data storage. In embedded applications, users can combine the multiplexing, coding and signal processing technology as well as other processing modules to realize the allocation and program configuration of the non-volatile memory.Secondly, let’s discuss the working principle of MT29F1G08ABBEAHC-IT:E TR. This device utilizes a distributed OFM (Open-Beam Fabric Memory) architecture which includes pre-read, write, erase, and program pulse capability. It contains multiple addressable unit cells and provides timing control of each block\'s write, erase, and program. The first stage of writing data to the MT29F1G08ABBEAHC-IT:E TR device is the external data-input. The data is then shifted in to the internal register before being buffered in the memory. When the write operation is initiated, an initialization command is sent with a write enable enable/disable signal. This will enable the write circuit and set the internal write enable bit. Then, the write pulse will be generated and the entered data will be written onto the selected memory location. The write operation takes place in several phases such as source line precharge, bit line precharge, source line select, source line write, and the AB select. The source line write and AB select commands will connect the internal source line to the internal bit line in order for the data to be written into the memory cells.After the write operation is complete, the internal write enable bit will be reset and the write circuit will be disabled. The erase operation is similar to the write operation, but instead of writing data, the erase function erases data from the selected memory location. The erase operation also follows similar steps such as source line precharge, bit line precharge, source line select, and AB select. After the erase operation is complete, the internal erase enable bit is reset and the erase circuit is disabled.Finally, the program operation is used to program and reprogram the memory cells. The program operation follows similar steps to the write and erase operations, but instead of writing/erasing data, this operation sets the status of the corresponding memory cell bits to either programmed or unprogrammed.In conclusion, MT29F1G08ABBEAHC-IT:E TR is a high-density, high-performance, non-volatile memory, which has been widely applied to many fields such as USB storage, industrial systems and embedded applications. Its distributed OFM architecture enables pre-read, write, erase, and program commands to be initiated within a single device. Therefore, MT29F1G08ABBEAHC-IT:E TR is suitable for applications requiring large datasets and fast write/read operations.
The specific data is subject to PDF, and the above content is for reference
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