MT29F1T08CUCABK8-6:A

Series:	--
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Tb (128G x 8)
Clock Frequency:	167MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)

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MemoryMT29F1T08CUCABK8-6:A is an operated memory device that is used in various applications. It is used to store data in a reliable and secure fashion. The device uses static random access memory (SRAM) technology which provides fast and reliable performance for applications that require a large amount of data storage. The device has the capability to store up to 8GB of data and is available in both DDR3 and DDR4 standards.The device uses latest technology, called SLC (single-level cell), to store more data per cell, which makes it a reliable and cost-effective way to store data. MT29F1T08CUCABK8-6:A also offers different operating voltage levels ranging from 33V to 1.6V and can support up to 80MHz operating frequency. Its power-saving feature makes this device suitable for applications that require long battery life, such as handheld devices, mobile internet devices, automotive, and other embedded systems. MT29F1T08CUCABK8-6:A has several applications, including automotive, video surveillance, medical imaging, and industrial automation. In automotive applications, the device is used to store navigation data, vehicle control data, and diagnostics and electronic stability control data. It is also used in video surveillance systems to store surveillance information and video recordings. Furthermore, the device is used in medical imaging to store patient health data, as well as in industrial automation to store information pertaining to process control and environmental monitoring systems.In addition, because of its low power consumption and architectural flexibility, the device is also suitable for use in data centers and the cloud, for mission-critical applications.The device uses the SLC technology to store data, which is done by storing one bit at a time per cell. The advantages of this technology are reliability, lower power consumption, and faster data access times. The device is also designed with features that minimize the risk of data corruption, such as Error-Correcting Code (ECC) detection and correction and Data Integrity Protocol (DIP) to protect data stored on the device. The device also offers on-die error correction and detection, which helps detect and correct any errors that occur during the read or write operation. Furthermore, the device is designed with a redundant write architecture, which ensures that any write commands are written twice and verified for data integrity.To ensure that the device operates efficiently, MT29F1T08CUCABK8-6:A comes with a thermal monitoring feature, which monitors the temperature of the device and adjusts the device’s operating frequency accordingly. This helps the device maintain an optimal operating temperature and ensures reliable performance.Overall, MT29F1T08CUCABK8-6:A is an advanced memory device that can be used in a wide variety of applications. It offers high data storage capacity and reliable performance, while providing fast access times and low power consumption. It also features advanced features such as ECC detection, redundant write architecture, and a thermal monitoring feature.

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